Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

High-Speed Logic Integrated Circuits with Solution-Processed Self-Assembled Carbon Nanotubes

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Flexible CMOS Integrated Circuits Based on Carbon Nanotubes with Sub-10 Ns Stage Delays

Carbon Nanotube Materials for Future Integrated Circuit Applications

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Gigahertz Integrated Circuits Based on Carbon Nanotube Films

Carbon nanotube-based flexible high-speed circuits with sub-nanosecond stage delays

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Logic Ciucuits Using Solution-processed Single-walled Carbon Nanotue Transistors

Carbon Nanotubes for High-Performance Logic

Carbon Nanotube Network Film-Based Ring Oscillators with Sub 10-Ns Propagation Time and Their Applications in Radio-Frequency Signal Transmission

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based on Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

CNT Electronics: Advances in High‐Performance Carbon‐Nanotube Thin‐Film Electronics (adv. Electron. Mater. 8/2019)

NEMS Based Logic and Memory Circuits

Carbon Nanotube Complementary Logic with Low-Temperature Processed End-Bonded Metal Contacts

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Speeding up carbon nanotube integrated circuits through three-dimensional architecture

Carbon Nanotube Technology For Solid State And Vacuum Electronics