Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems.

Carbon Nanotube Materials for Future Integrated Circuit Applications

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

High-Performance Carbon Nanotube Complementary Electronics and Integrated Sensor Systems on Ultrathin Plastic Foil

High-Temperature-Annealed Flexible Carbon Nanotube Network Transistors for High-Frequency Wearable Wireless Electronics.

Terahertz metal-oxide-semiconductor transistors based on aligned carbon nanotube arrays

(Invited) High-Performance Carbon Nanotube Based Flexible Electronics for Integrated Smart Sensor System

High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

High-Speed Carbon Nanotube Photodetectors for 2 Μm Communications.

Gigahertz Integrated Circuits Based on Carbon Nanotube Films

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Monolithic Three-Dimensional Integration of Carbon Nanotube Circuits and Sensors for Smart Sensing Chips

Ultrafast Carbon Nanotube Photodetectors with Bandwidth over 60 GHz

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

Carbon nanotube radio-frequency electronics

Carbon Nanotube Electronics - Materials, Devices, Circuits, Design, Modeling, and Performance Projection

Ultrafast Carbon Nanotube Photodetectors with a Zero Bias Bandwidth over 30 GHz.

Carbon Based High Performance Doping-Free Nanoelectronic and Optoelectronic Devices

Highly Temperature-Stable Carbon Nanotube Transistors and Gigahertz Integrated Circuits for Cryogenic Electronics

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits