Abstract:Two dopants are combined to improve the thermoelectric performance of tin selenide (SnSe). Sliver (Ag) doping both narrows the band gap and increase the hole concentration. Aluminum (Al) is further used to modify the band structure improving Seebeck coefficient and introduce defects reducing thermal conductivity. The figure of merit for Ag0.01Al0.01Sn0.98Se can be up to 1.69 at 823 K. Single crystal tin selenide (SnSe) has a recorded high thermoelectric figure of merit (ZT) value of 2.6 at 923 K, but it is easy to form mechanical cracks and difficult to apply in thermoelectric conversion devices. Polycrystalline SnSe has better mechanical properties but inferior ZT values, which needs further optimization for applications. This work aims at enhancing the thermoelectric performance of polycrystalline SnSe through synergistic optimization of sliver (Ag) and aluminum (Al) co‐doping with the hydrogen reduction. The effects of Ag and Al doping on electronic transport properties are systematically investigated by density functional theory calculation and experimental measurement. Compared with pristine SnSe, Ag doping can effectively increase the hole concentration to 1.58 × 1019 cm−3 and improve the conductivity. Results also indicate that using Al dopant may slightly decrease the hole concentration but reduce the thermal excitation temperature, and introduce point defects reducing the lattice thermal conductivity through scattering phonons. In addition, the hydrogen reduction of sample powders before synthesis can effectively remove Sn oxides and reduce lattice thermal conductivity. At last, a state‐of‐the‐art maximum ZT value of 1.69 at 823 K is obtained in Ag0.01Al0.01Sn0.98Se. This study provides a theoretical basis and technical guidance for designing high‐performance polycrystalline SnSe.

Polycrystalline SnSe–Sn1–vS Solid Solutions: Vacancy Engineering and Nanostructuring Leading to High Thermoelectric Performance

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Enhanced thermoelectric properties of p-type SnS0.2Se0.8 solid solution doped with Ag

Synthesis and Thermoelectric Properties of Ag-Doped Snse

High Thermoelectric Figure of Merit ZT > 1 in SnS Polycrystals

Thermoelectric Performance of Cu2SnSe3-AgInSe2 Solid Solutions with Sn Vacancy

High thermoelectric properties realized in polycrystalline (Ag, Ga) Co-doped SnSe via two-steps point defects modulation

Achieving High Thermoelectric Figure of Merit in Polycrystalline SnSe Via Introducing Sn Vacancies

High Thermoelectric Properties for Sn-doped AgSbSe 2

Realizing High Thermoelectric Performance of Ag/Al Co‐Doped Polycrystalline SnSe through Band Structure Modification and Hydrogen Reduction

Independently Tuning the Power Factor and Thermal Conductivity of SnSe Via Ag2S Addition and Nanostructuring

Synergistic Optimization of Thermoelectric Performance in SnSe2 through co-doping: Anionic Vacancy Formation and Band Engineering

Enhanced thermoelectric performance of highly oriented polycrystalline SnSe based composites incorporated with SnTe nanoinclusions

Enhanced thermoelectric perfromance in cubic form of SnSe stabilized through enformatingly alloying AgSbTe2

Divacancy and Resonance Level Enables High Thermoelectric Performance in N-Type SnSe Polycrystals

Thermoelectric SnS and SnS-SnSe Solid Solutions Prepared by Mechanical Alloying and Spark Plasma Sintering: Anisotropic Thermoelectric Properties.

Lattice Strain Leads to High Thermoelectric Performance in Polycrystalline SnSe

Band flattening and phonon-defect scattering in cubic SnSe–AgSbTe2 alloy for thermoelectric enhancement

Modulating structures to decouple thermoelectric transports leads to high performance in polycrystalline SnSe

High Thermoelectric Performance in P‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering

Ag, Pb co-doped SnSe high performance thermoelectric materials