Flexible One Diode-One Resistor Composed of ZnO/poly (Fluorene-Alt-benzothiadiazole) (PFBT) Heterojunction Diode and TiO2 Resistive Memory

Bo Chen,Jian-Chang Li,Jia-Jie Ma
DOI: https://doi.org/10.1088/2053-1591/aacc17
IF: 2.025
2018-01-01
Materials Research Express
Abstract:One diode-one resistor (1D1R) memory is an effective structure to suppress sneak current and read interference of crossbar network. Organic-inorganic complex plays an important factor in the field of flexible microelectronic memory due to integrated flexibility and excellent electronic properties. Herein, we demonstrated a 1D1R based on the n-n heterojunction diode of ZnO/polymer and Al/TiO2/Al resistor. The resistive switching performance of flexible 1D1R decreased with increase of bending times. Atomic force microscopy results show that the cracks on the ZnO film surface were related to the bending cycles. The scanning electron microscopy indicates crack growth path was along the grain boundaries. The finite element studies confirmed that channel crack of ZnO film and delamination between ZnO and polymethyl methacrylate interface are the main failure mode for the 1D1R under bending, which leads to a lower forward current in the low resistance state and weaken the ON/OFF ratio of 1D1R.
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