Controlling of Resistive Switching and Magnetism Through Cu2+ Ions Substitution in Nickel Ferrite Based Nonvolatile Memory
Aize Hao,Dianzeng Jia,Muhammad Ismail,Ruqi Chen,Dinghua Bao
DOI: https://doi.org/10.1016/j.jallcom.2019.03.193
IF: 6.2
2019-01-01
Journal of Alloys and Compounds
Abstract:Ni-Cu ferrite (Ni1-xCuxFe2O4, x = 0, 0.05, 0.1, 0.15, 0.2, 0.25) thin films were synthesized on Pt/Ti/SiO2/Si substrates via sol-gel method. The influence of Cu2+ ions substitution on the resistive switching and magnetism of nickel ferrite thin films were investigated. The appropriate 0.2 Cu2+ ions substituted Pt/ NFO/Pt device exhibited improved resistive switching parameters such as lower electroforming voltages, narrow distribution of SET/RESET voltages, good endurance (10(3) cycles), and long data retention upto 10(5) sat 25 degrees C and 85 degrees C, respectively. With increasing Cu2+ ions substitution, the saturation magnetization of Ni-Cu ferrite thin films decreased. The 0.2 Cu2+ ions substituted Pt/NFO/Pt device illustrated the controlling magnetism by accompanying with high saturation magnetization to switch into low saturation magnetization during the resistive switching process. The modulation of Cu2+ ions substitution on the magnetic properties was linked with magnetic moments and oxygen vacancies concentrations. Current transport conduction mechanisms were Ohmic behavior in low resistance state and Schottky emission in high field region of high resistance state. Moreover, temperature dependence of resistance revealed that origin of switching mechanism was related with the hybrid Cu mental and oxygen vacancies conducting filaments. Our results suggest that controlling the paths of hybrid conductive filaments is an effective strategy to modulate resistive switching performance and magnetism in ferrite based devices. (C) 2019 Elsevier B.V. All rights reserved.