Abstract:Highly flexible, nonvolatile resistive switching-based memory devices with a hierarchical thin-film architecture were fabricated using a low-temperature, cost-efficient solution processing technique. The device structure consists of an ITO-coated flexible PET substrate as the bottom electrode and a PMMA-embedded reduced-graphene/ZnO nanoparticle (NP) (rGO/ZnO NP) heterostructure as the flexible active layer. Besides, a PMMA-embedded graphene oxide (GO/PMMA)-based device was also fabricated as a reference. The operating voltage of this device is limited within ±2 V, whereas the ON/OFF current ratio is ∼106, which is ∼103 times higher than the reference device. The device also exhibited excellent endurance and retention characteristics, with no significant degradation for more than 50 cycles. Besides, the retention time of this device is ∼104 s, which is several times more than that of the reference device. These electrical performance enhancements were attributed to the multifunctionality introduced by the rGO/ZnO NP heterostructures, which combine the excellent conductivity of rGO nanosheets with charge trapping and transport properties and high electron mobility of ZnO nanostructures. A model based on the energy band of the components of this composite material has been proposed for a better understanding of this mechanism. Flexibility studies exhibited stable device performance for an extreme bending radius of 6 mm. The resistance of the device in ON and OFF states did not show any significant change even after 1000 bending cycles, thus establishing the device as an excellent memory candidate for flexible electronic applications such as flexible displays and sensors, wearable devices, implantable medical devices, and portable diagnostic devices.

Flexible resistive switching memory based on Mn0.20Zn 0.80O/HfO2 bilayer structure

Flexible Resistive Switching Memory Based on Mn0.20Zn0.80O/HfO2 Bilayer Structure

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Resistive Switching of Hfo2 Based Flexible Memories Fabricated by Low Temperature Atomic Layer Deposition

Stretchable HfO2-Based Resistive Switching Memory Using the Wavy Structured Design

A Flexible Hf0.5Zr0.5O2 Thin Film with Highly Robust Ferroelectricity

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure.

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr0.7ca0.3mno3 Thin Film Memory Devices

Bistable Resistance Switching of Cu/Cu: HfO2/Pt for Nonvolatile Memory Application

Polymerized Hybrid Hf-based Hydroquinone/al2o3 Bilayer Structure by Molecular/atomic Layer Deposition for Non-Volatile Resistive Random Access Memory

Analog-type resistive switching behavior of Au/HfO2/ZnO memristor fabricated on flexible Mica substrate

Stable Resistive Switching in ZnO/PVA:MoS<sub>2</sub> Bilayer Memristor

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 Heterostructure Resistive Memory

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Resistive Switching Behavior and Thermal Stability in the Flexible BEFO/ZnO/LSMO Heterostructure for Flexible/wearable Electronics

Highly Flexible Non-Volatile Resistive Memory Devices Based on ZnO Nanoparticle/Graphene Heterostructures Embedded in Poly(methyl methacrylate)