Abstract:The information explosion inmodern society requires increasingly higher densities in data storage, which is gradually becoming difficult to achieve through traditional binary memory techniques. Resistance switching random access memory (RRAM), as a promising high-density memory solution, is gradually attracting both fundamental and industrial interest. RRAMs consist of two electrodes sandwiching a thin layer of active material that, under an external electric eld, possesses different conductive states, which are considered “0” or “1” for information storage. In addition, due to their simple three-layers structure, RRAMs can be used for three-dimensional stacking and can dramatically expand the information density. Most importantly, if multiple conductive states exist in the active materials, each memory cell can store more than two states, such as “0”, “1”, “2”.. This multilevel RRAM technique is expected to result in a revolutionary enhancement in the information density from 2 to X (where n is the cell density and X is the state number of each cell). Aer decades of intensive research, many inorganic oxides, polymers and small molecules have been found to exhibit multilevel resistive switching behaviours and are thus considered candidate active materials for multilevel RRAMs. However, to enable industrial use, RRAM devices must show good reproducibility, including a high multilevel memory device yield and narrow distribution of OFF/ON1/ON2 switching voltages. Unfortunately, numerous studies have explored new RRAM active materials based on the measurements on individual devices, but statistical data on a large batch are rarely reported. Our recent statistical work demonstrated that

Flexible Ternary Resistive Memory from Organic Bulk Heterojunction

Ternary Flexible Electro-resistive Memory Device Based on Small Molecules.

The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance

Conjugated zwitterion-inspired flexible ternary resistive memory from rhodamine dyes

ing to achieve organic ternary memory with a high device yield and improved performance †

Amorphous Spiro‐OMeTAD Prepared Flexible Films with Surface Engineering Boost Ternary Resistive Memory Yield to 86%

Mussel-Inspired Polydopamine Coating for Flexible Ternary Resistive Memory.

Enhanced Intra/Intermolecular Charge Transfer for Efficient Multilevel Resistive Memory

Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design.

Pseudohalide-Induced 2D (ch3nh3)(2)pbi2(scn)(2) Perovskite for Ternary Resistive Memory with High Performance

Recent Advances in Flexible Resistive Random Access Memory

One-Step Fabrication of Bio-Compatible Coordination Complex Film on Diverse Substrates for Ternary Flexible Memory

Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform

One-dimensional Π-D Conjugated Coordination Polymers: Synthesis and Their Improved Memory Performance

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain

A Flexible Organic Resistance Memory Device for Wearable Biomedical Applications

Manipulation of Push-Pull System by Functionalization of Porphyrin at beta-Position for High-Performance Solution-Processable Ternary Resistive Memory Devices

Resistive Switching in Organic Memory Devices for Flexible Applications

Poly(3,4-ethylenedioxythiophene)-Poly(styrenesulfonate) Interlayer Insertion Enables Organic Quaternary Memory.

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem