Abstract:The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a composite, which served as an active layer to fabricate the FTO//Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:104.2:101.6 for "OFF", "ON1", and "ON2" states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV–vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c14686.Synthesis of TEP-Azo, detailed structural and material characterizations (1H NMR, 13C NMR, HRMS, FT-IR, TGA, SEM, and electrical characterizations), comparison study of other multilevel memristors, stability study on WORM devices, additional figures about endurance, multilevel behavior at different temperatures, and mechanism studies (PDF)Solvent evaporation method CCDC 2093221 (CIF)This article has not yet been cited by other publications.

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