Elevating the resistive memory from binary to ternary by introducing trialkyl phosphorus into binaphthol/ferrocene cores in their polystyrene composites

Yuan-Zheng Liu,Yue Liu,Bin-Jun Chen,Hai-Long Yang,Xiao-Li Lin,Hao-Hong Li,Zhi-Rong Chen

DOI: https://doi.org/10.1016/j.mtcomm.2022.105026

IF: 3.8

2022-11-27

Materials Today Communications

Abstract:The design of electrically active composites by modifying with functional groups with definite switching mechanism is the key to develop new multi-level memorizers. In this work, five binaphthol and two ferrocene derivants were embedded into polystyrene (PS) to fabricate FTO/binaphthol or ferrocene /Ag memory devices. Binaphthol derivants were firstly used in the memory devices, four of which exhibit binary resistive switching performance with ON/OFF ratio about 10 2.02 –10 2.44 . Interestingly, the trialkyl phosphorus-bearing one demonstrates excellent ternary memory performance with considerable ON2/ON1/OFF current ratio of 10 2.30 :10 4.22 :1, relatively low set voltages (0.99 and 1.68 V), good reliability, and high ternary yield of 66 %. Besides, two trialkyl phosphorus-containing composites also illustrate typical ternary resistive switching behavior with ON2/ON1/OFF current ratio of 10 2.34 :10 3.78 :1 and 10 1.97 :10 4.47 :1. Their ON1 states stem the increased dihedral angle of two naphthaline rings with the injection of hot carriers (for binaphthol derivants) and oxidation of ferrocene units (for ferrocene derivants). Interestingly, the ON2 states root from the flattening of tricoordinate phosphorus, which can enhance the conjugated degree, and as a result, higher conductivities. The rigid PS matrix can act as charge blocking layer and aggregation-inhibited species. The introduction of trialkyl phosphorus will be an efficient strategy for implementing low cost organic multi-level memorizer.

materials science, multidisciplinary