Controlled Memristic Behavior of Metal-Organic Framework as a Promising Memory Device

Lei Li
DOI: https://doi.org/10.3390/nano13202736
IF: 5.3
2023-10-10
Nanomaterials
Abstract:Metal-organic frameworks (MOFs) have attracted considerable interests for sensing, electrochemical, and catalytic applications. Most significantly, MOFs with highly accessible sites on their surface have promising potential for applications in high-performance computing architecture. In this paper, Mg-MOF-74 (a MOF built of Mg(II) ions linked by 2,5-dioxido-1,4-benzenedicarboxylate (DOBDC) ligands) and graphene oxide composites (Mg-MOF-74@GO) were first used as an active layer to fabricate ternary memory devices. A comprehensive investigation of the multi-bit data storage performance for Mg-MOF-74@GO composites was discussed and summarized. Moreover, the structure change of Mg-MOF-74@GO after introducing GO was thoroughly studied. The as-fabricated resistive random access memory (RRAM) devices exhibit a ternary memristic behavior with low SET voltage, an RHRS/RIRS/RLRS ratio of 103:102:1, superior retention (>104 s), and reliability performance (>102 cycles). Herein, Mg-MOF-74@GO composite films in constructing memory devices were presented with GO-mediated ternary memristic properties, where the distinct resistance states were controlled to achieve multi-bit data storage. The hydrogen bonding system and defects of GO adsorbed in Mg-MOF-74 are the reason for the ternary memristic behavior. The charge trapping assisted hopping is proposed as the operation mechanism, which is further confirmed by XRD and Raman spectra. The GO-mediated Mg-MOF-74 memory device exhibits potential applications in ultrahigh-density information storage systems and in-memory computing paradigms.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?
### Problems the Paper Attempts to Solve The paper primarily explores the application of magnesium-based metal-organic framework (Mg-MOF-74) and graphene oxide (GO) composites in resistive random-access memory (RRAM). Specifically, the research attempts to address the following issues: 1. **Multivalued Data Storage Performance**: By preparing Mg-MOF-74@GO composite thin films and using them as the active layer in RRAM devices, the study investigates their multivalued data storage performance. 2. **Ternary Resistive Switching Behavior**: It verifies whether the Mg-MOF-74@GO composite can exhibit stable ternary resistive switching behavior and analyzes its performance under low set voltage. 3. **Long Retention Time and Reliability**: It evaluates the long retention time (>10^4 seconds) and high reliability (>10^2 cycles) of the Mg-MOF-74@GO composite in RRAM devices. 4. **Mechanism Analysis**: It explores the specific mechanism of the ternary resistive switching behavior exhibited by the Mg-MOF-74@GO composite in RRAM devices, including the charge trap-assisted hopping mechanism. Through these studies, the paper aims to demonstrate the potential application value of Mg-MOF-74@GO composites in ultra-large-scale information storage systems and in-memory computing paradigms.