Abstract:Advancements in artificial intelligence are driving the need for highly parallel and energy‐efficient computing analogous to the human brain. In light of this, recent progresses, challenges, limitations, and future outlooks of multifunctional optoelectronic metal oxide–polymer hybrid composites‐based resistive memory devices are explored, particularly for their perspectives toward artificial synapses for neural networks that can emulate neuromorphic visualization and memorize information. Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the intelligent circuitry architecture for developing high‐performance neuromorphic computing systems. This occurs due to their fast switching with ultralow power consumption, high ON/OFF ratio, excellent data retention, good endurance, and even great possibilities for altering resistance analogous to their biological counterparts for neuromorphic computing applications. Additionally, with the advantages of photoelectric dual modulation of resistive switching, ReRAMs allow optically inspired artificial neural networks and reconfigurable logic operations, promoting innovative in‐memory computing technology for neuromorphic computing and image recognition tasks. Optoelectronic neuromorphic computing architectured ReRAMs can simulate neural functionalities, such as light‐triggered long‐term/short‐term plasticity. They can be used in intelligent robotics and bionic neurological optoelectronic systems. Metal oxide (MOx)–polymer hybrid nanocomposites can be beneficial as an active layer of the bistable metal–insulator–metal ReRAM devices, which hold promise for developing high‐performance memory technology. This review explores the state of the art for developing memory storage, advancement in materials, and switching mechanisms for selecting the appropriate materials as active layers of ReRAMs to boost the ON/OFF ratio, flexibility, and memory density while lowering programming voltage. Furthermore, material design cum‐synthesis strategies that greatly influence the overall performance of MOx–polymer hybrid nanocomposite ReRAMs and their performances are highlighted. Additionally, the recent progress of multifunctional optoelectronic MOx–polymer hybrid composites‐based ReRAMs are explored as artificial synapses for neural networks to emulate neuromorphic visualization and memorize information. Finally, the challenges, limitations, and future outlooks of the fabrication of MOx–polymer hybrid composite ReRAMs over the conventional von Neumann computing systems are discussed.

Lasing‐Assisted Synthesis of Metal–Organic Frameworks (MOFs) and Its Application to Memory and Neuromorphic Devices

The synthesis of MOF nanosheets and their application in MOF-based resistance random access memory devices

Metal-organic Framework Single Crystal for In-Memory Neuromorphic Computing with a Light Control

Intensive harmonized synapses with amorphous Cu2O-based memristive using ultrafine Cu nanoparticle sublayers formed via atomically controlled Electrochemical Pulse Deposition

Continuous fabrication of MOF-based memory elements via droplet microfluidic synthesis

High‐Quality Two‐Dimensional Metal‐Organic Framework Nanofilms for Nonvolatile Memristive Switching

Controlled Memristic Behavior of Metal-Organic Framework as a Promising Memory Device

Ultrathin Metal–Organic Framework Nanosheets as Nano‐Floating‐Gate for High Performance Transistor Memory Device

Interface engineering in ZnO/CdO hybrid nanocomposites to enhanced resistive switching memory for neuromorphic computing

Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

Optically Mediated Nonvolatile Resistive Memory Device Based on Metal-Organic Frameworks

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Metal-containing Organic Compounds for Memory and Data Storage Applications

Simultaneous Implementation of Resistive Switching and Rectifying Effects in a Metal-Organic Framework with Switched Hydrogen Bond Pathway.

One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing

Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing

Light-/steam-driven Polymeric Crosslinking with Porous Multistructure Pattern for Ultrastable and Fast-Speed Memory

Metallopolymeric Memristor Based Artificial Optoelectronic Synapse for Neuromorphic Computing

Porous crystalline materials for memories and neuromorphic computing systems

Kinetic Monte Carlo Simulations on Electroforming in Nanomanipulated Conductive Bridge Random Access Memory Devices