Abstract:The exponentially improving performance of digital computers has recently slowed due to the speed and power consumption issues resulting from the von Neumann bottleneck. In contrast, neuromorphic computing aims to circumvent these limitations by spatially co-locating logic and memory. Beyond reducing power consumption, neuromorphic devices provide efficient architectures for image recognition, machine learning, and artificial intelligence [1]. This talk will explore how two-dimensional (2D) nanoelectronic materials enable gate-tunable neuromorphic devices [2]. For example, by utilizing self-aligned, atomically thin heterojunctions, dual-gated Gaussian transistors have been realized, which show tunable anti-ambipolarity for artificial neurons, competitive learning, spiking circuits, and mixed-kernel support vector machines [3]. In addition, field-driven defect motion in polycrystalline monolayer MoS 2 enables gate-tunable memristive phenomena that serve as the basis of hybrid memristor/transistor devices (i.e., 'memtransistors' [4]) that concurrently provide logic and data storage functions [5]. The planar geometry of memtransistors further allows multiple contacts and dual gating that mimic the behavior of biological systems such as heterosynaptic responses [6]. Moreover, control over polycrystalline grain structure enhances the tunability of potentiation and depression, which enables unsupervised continuous learning in spiking neural networks [7]. Overall, this work introduces foundational circuit elements for neuromorphic computing by utilizing the unique quantum characteristics of 2D nanoelectronic materials [8]. [1] V. K. Sangwan, et al. , Nature Nanotechnology, 15 , 517 (2020). [2] M. E. Beck, et al. , ACS Nano , 14 , 6498 (2020). [3] M. E. Beck, et al. , Nature Communications , 11 , 1565 (2020). [4] V. K. Sangwan, et al. , Nature , 554 , 500 (2018). [5] X. Yan, et al. , Advanced Materials , 34 , 2108025 (2022). [6] H.-S. Lee, et al. , Advanced Functional Materials , 30 , 2003683 (2020). [7] J. Yuan, et al. , Nano Letters , 21 , 6432 (2021). [8] X. Liu, et al. , Nature Reviews Materials , 4 , 669 (2019).

Covalent Organic Frameworks for Neuromorphic Devices

One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing

Dual Redox-active Covalent Organic Framework-based Memristors for Highly-efficient Neuromorphic Computing

Porous crystalline materials for memories and neuromorphic computing systems

Covalent organic frameworks: a materials platform for structural and functional designs

Ferroelectric materials for neuroinspired computing applications

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

Interface-confined Synthesis of a Nonplanar Redox-Active Covalent Organic Framework Film for Synaptic Memristors

Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.

Neuromorphic Computing: Devices, Hardware, and System Application Facilitated by Two-Dimensional Materials

Building Neuromorphic Circuits with Memristive Devices

Organic Iontronic Memristors for Artificial Synapses and Bionic Neuromorphic Computing

An Antiferromagnetic Neuromorphic Memory Based on Perpendicularly Magnetized CoO

(Invited) Two-Dimensional Neuromorphic Computing Materials and Devices

Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics

Organic heterojunction synaptic device with ultra high recognition rate for neuromorphic computing

Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing

Metal Oxide Resistive Random Access Memory Based Synaptic Devices for Brain-Inspired Computing

Neuromorphic Computing Systems with Emerging Nonvolatile Memories: A Circuits and Systems Perspective

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Emerging Memory Devices for Neuromorphic Computing