Abstract:The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type smallmolecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp(2) orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H center dot center dot center dot N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.

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Adjustment of Conformation Change and Charge Trapping in Ion-Doped Polymers to Achieve Ternary Memory Performance

A Novel Bat-Shaped Dicyanomethylene-4H-pyran-Functionalized Naphthalimide for Highly Efficient Solution-Processed Multilevel Memory Devices.

Quinoxaline-Based Donor-Acceptor Conjugated Polymers for Nonvolatile Ternary Memory Devices

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A Conjugated Polymer Bearing Perylenediimide (PDI) and Ferrocene (Fc) Exhibiting Stable Data‐Storage Performance

Morphology optimization of side-chain copolymers yields a ternary memory device with high stability and reproducibility

The Effect of Random and Block Copolymerization with Pendent Carbozole Donors and Naphthalimide Acceptors on Multilevel Memory Performance

Enhanced Performance of Conjugated Polymer-Based Ternary Memory Devices by Embedding Pt Nanoparticles

Regulating WORM/Flash Electrical Memory Behavior of Metallopolymers Through Varying Metal Centers

Zinc Ion Triggered Controllable Binary/Ternary Memory Conversion Behaviors in Polyimides Containing Pendant Porphyrin Group

Enhanced Intra/Intermolecular Charge Transfer for Efficient Multilevel Resistive Memory

Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High Performance Flash Memory.

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain

Improved Ternary Memory Performance of Donor–acceptor Structured Molecules Through Cyano Substitution

Different Steric-Twist-Induced Ternary Memory Characteristics In Nonconjugated Copolymers With Pendant Naphthalene And 1,8-Naphthalimide Moieties

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H center dot center dot center dot N Interaction and Anion Radicals for Stable ReRAM Performance

Facile One-Pot Electropolymerization of Novel Cu Complexed Conducting Polymer for Resistive Random Access Memory