Abstract:Summary form only given. Recently, graphene has attracted wide attentions for its unique properties in optics and electronics. Many excellent designs were proposed base on the structured graphene such as modulators, optical polarizers and limiters [1]. Thus, the fabrication ability of graphene structures can be thought as the cornerstone of the development of the graphene optical and electrical devices. The common used methods include laser direct writing (LDW), focus ion beam etching, electron beam lithography and etc. Among them, LDW was considered as one of the most valuable methods for its non-mask and no secondary deposition. Many efforts were made to improve the resolution and the precision of the LDW fabrication. However, the results are not very ideal. As far as we know, the best achievement was presented by R. Sanin. et al [2]. They generate the third harmonic of the 1030 nm femtosecond laser (343 nm) and convert the Gaussian laser beam to a Bessel beam. 480 nm average width ablation lines with precision ±80 nm were achieved by adjusting the laser power and the scanning speed. However, this width doesn't break the diffraction limit of the laser.Here, we propose a new idea to improve the fabrication quality of graphene structures by the LDW. Graphene slices grown by chemical vapor deposition (CVD) are transferred onto a SiC substrate. A Ti:sapphire femtosecond laser Gaussian beam (wavelength λ=800 nm, 120 fs pulse duration, 1 kHz repetition rate) is used to process the samples. The resolution can easily break the diffraction limit under proper ambient conditions. The width is reduced to as narrow as 216 nm and the precision is kept in ± 15 nm, only 11% of the resolution. The scanning electron microscope (SEM) of the fabrication results are shown in Fig. 1(a).

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