Abstract:Thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have become essential building blocks for a broad range of electronics, since TAOSs facilitate large‐scale fabrication at moderate temperatures and hence feature compatibility with flexible substrates. An emerging indium‐free alternative to the widely commercially exploited indium gallium zinc oxide (IGZO) is amorphous zinc tin oxide (ZTO); however, according to previous reports, achieving acceptable performance of ZTO‐based devices fabricated at temperatures below 300 °C is still challenging to date. Here, key properties of the first all‐oxide and fully transparent metal‐semiconductor field‐effect transistors (MESFETs), metal‐insulator‐semiconductor field‐effect transistors (MISFETs) and junction field‐effect transistors (JFETs) based on amorphous ZTO are compared, employing PtOx, HfOy, and p‐type NiO as gate, respectively. All individual layers have been deposited exclusively at room temperature and do not require any additional postdeposition annealing to obtain sufficient device functionality. Demonstrated TFTs exhibit reasonable current on/off ratios of over six orders of magnitude with subthreshold swings as low as 61 mV dec–1 at room temperature. Transistor characteristics have been recorded for several weeks to study performance consistency over time and are further investigated regarding their stability under bias stress.

Room-Temperature Processed Amorphous ZnRhCuO Thin Films with P-Type Transistor and Gas-Sensor Behaviors

Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Amorphous IZO-based transparent thin film transistors

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

Room-Temperature Ozone Sensing Capability of IGZO-Decorated Amorphous Ga2O3 Films

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Characteristic research of zinc oxide based thin film transistor by ALD technology

Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications

Solution Processed Amorphous ZnSnO Thin-Film Phototransistors

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates

Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Thin-Film Transistors Based on Amorphous ZnNbSnO Films with Enhanced Behaviors

Amorphous ZnAlSnO Thin-Film Transistors by a Combustion Solution Process for Future Displays

Characterization Of Amorphous Si-Zn-Sn-O Thin Films And Applications In Thin-Film Transistors

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate