Abstract:In2Se3/InSe vertical heterojunctions are prepared with specific phases by optimizing the growth conditions using 2D InSe as the seeding material. Meanwhile, the microstructural mechanism for the temperature‐dependent phase evolution of β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 is revealed by using the state‐of‐the‐art Cs‐STEM technique. It has been found that β‐In2Se3 is the intermediate state for the phase transition between different In2Se3 polymorphs. The polymorphic nature of In2Se3 leads to excellent phase‐dependent physical properties including ferroelectricity, photoelectricity, and especially the intriguing phase change ability, making the precise phase modulation of In2Se3 of fundamental importance but very challenging. Here, the growth of In2Se3 with desired‐phase is realized by temperature‐controlled selenization of van der Waals (vdW) layered bulk γ‐InSe. Detailed results of Raman spectroscopy, scanning electron microscopy (SEM), and state‐of‐the‐art spherical aberration‐corrected transmission electron microscopy (Cs‐TEM) clearly and consistently show that β‐In2Se3, 3R α‐In2Se3, and 2H α‐In2Se3 can be perfectly obtained at ≈270, ≈300, and ≈600 °C, respectively. Further comprehensive atomic imaging analyses confirm that the seeding material, InSe, plays a critical role in the low‐temperature epitaxial growth of vdW‐layered In2Se3, and, more interestingly, β‐In2Se3 acts as an intermediate phase between 3R and 2H α‐In2Se3 transitions. This investigation not only provides a simple yet versatile strategy for the phase modulation of In2Se3, but also sheds light on the temperature‐dependent phase evolution of In2Se3.

Growth and Structural Characteristics of Metastable Β-in 2 Se 3 Thin Films on H-terminated Si（111） Substrates by Molecular Beam Epitaxy

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

The Growth and Characteristics of In2Se3/(Bi1−xInx)2Se3 Superlattices with Asymmetric Graded Interfaces by Molecular Beam Epitaxy

Monolithic Epitaxy and Optoelectronic Properties of Single-Crystalline Γ-in 2 Se 3 Thin Films on Mica

Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In<sub>2</sub>Se<sub>3</sub> thin films on mica*

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Substrate-induced phase control of In2Se3 thin films

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In2Se3 on fluor-phlogopite

Selectable Growth and Electronic Structures of Two-Dimensional Layered InSe and In2Se3 Films

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy

Single Domain Bi2Se3 Films Grown on InP(111)A by Molecular-Beam Epitaxy

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial Β–in2se3 Thin Films

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Growth characteristics of topological insulator Bi2Se3 films on different substrates

Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy