Abstract:With the development of the ultra-large scale integrated circuit (ULSI) technology, CoSi2 has become a leading candidate for contact materials in electronic devices due to its linewidth-independent low resistivity and small lattice mismatch with Si substrate [1]. Among many methods to fabricate epitaxial CoSi2 films, solid phase epitaxy (SPE) is a very important one [2]. Ti-interlayer mediated epitaxy (TIME) [3] and oxide mediated epitaxy (OME) [4] can be regarded as improvements of SPE. In SPE, the Co film is usually deposited at room temperature and the as-deposited Co films are usually amorphous [2, 5]. During low temperature annealing, the crystallization of Co film can be observed; yet during high temperature annealing, especially rapid thermal annealing (RTA), this process cannot be observed [5]. So in high temperature RTA, we cannot tell whether the Co film has undergone crystallization before the formation of silicides. This fact suggests that the formation of silicides during high temperature RTA may be the result of the reaction between amorphous Co film and Si substrate, not the reaction between crystalline Co film and Si substrate. Based on this consideration, we expect the reaction between real crystalline Co film and Si substrate to produce some results different from previous reports. Si(111) substrate was chosen because the epitaxial growth of CoSi2 film on Si(111) is not so complicated as that on Si(100). The purpose of this letter is to study the reaction between crystalline Co film and Si(111) substrate. n-Typed Si(111) with a resistivity of 4‐4.8� · cm were ultrasonically cleaned in acetone, rinsed in deionized water, etched in HF : H2O2(1 : 1), rinsed in deionized water again, and then loaded into the e-gun evaporation system. The base pressure of the system was 1.2 × 10 −8 Torr. During the deposition process, the vacuum level was 2.3 × 10 −7 Torr. Crystalline Co films of 150 nm thickness were obtained by heating the substrate to 150 ◦ C during the e-gun evaporation. Subsequent ex situ RTA was carried out in a high vacuum of 3.0 × 10 −6 Torr at temperatures between 470 and 850 ◦ C for 3 min. X-ray diffraction (XRD) was used to investigate the phases and their preferential orientations formed during the Co-Si reaction. The composition of the film was analyzed by auger electron spectroscopy(AES) and the crystalline properties of CoSi2 films were evaluated by reflection high-energy electron diffraction (RHEED).

Nondestructive Characterization of Thin Silicides Using X-Ray Reflectivity

Extensive Raman spectroscopic investigation of ultrathin Co 1-xNi xSi 2 films grown on Si(100)

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film

In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

Interferometric investigation of the SiSiO2 interregion at wavelengths of 110–130 Å

Reflection Surface X-Ray Diffraction Patterns: K-Space Images

X-ray standing wave and reflectometric characterization of multilayer structures

X-ray reflectivity with a twist: quantitative time-resolved X-ray reflectivity using monochromatic synchrotron radiation

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

On Epitaxy of Ultrathin Ni1-Xptx Silicide Films on Si(001)

Physical Structures Of Sio2 Ultrathin Films Probed By Grazing Incidence X-Ray Reflectivity

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

Solid phase reaction between crystalline, (002) oriented Co film and Si(111) substrate: Preferential orientations of silicides

In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

Formation and properties of ternary silicide (Co/sub x/Ni/sub 1-x/)Si/sub 2/ thin films

X-ray phase contrast topography to measure the surface stress and bulk strain in a silicon crystal

X‐ray standing wave assisted XANES for depth dependent chemical state analysis of Cr in Cr2O3/Cr bilayer structure

In situ XRD measurements to explore phase formation in the near surface region