Physical Structures Of Sio2 Ultrathin Films Probed By Grazing Incidence X-Ray Reflectivity

Yasushi Azuma,Jiangwei Fan,Isao Kojima,Shiqiang Wei

DOI: https://doi.org/10.1063/1.1941469

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:The effects of contamination overlayer and density as well as surface and interface roughnesses on the x-ray reflectivity of a SiO2 ultrathin film are discussed from viewpoints of experiment and theory. Grazing incidence x-ray reflectivity (GIXRR) is used to accurately measure physical structures of SiO2 ultrathin films grown on Si substrate by effectively resolving deviations caused by a contamination overlayer (i.e., H2O and carbonaceous compounds). GIXRR results indicate that only the thickness accuracy of a SiO2 film is largely affected by the overlayer. The thickness of a SiO2 film obtained from GIXRR peak extrema and theoretical fitting reveals that if a SiO2 film with the thickness of 2.64 nm is considered as a single layer, the H2O overlayer with a thickness of 0.55 nm makes the thickness of the SiO2 film increase to 3.09 nm, and the deviation is about 17% from its corrected thickness. By evaluating the GIXRR results of three repeating measurements of a nominal 4-nm SiO2 film, its density, thickness, and surface and interface roughnesses are 2.43 +/- 0.01 g/cm(3), 3.99 +/- 0.03 nm, and 0.40 +/- 0.02 nm and 0.25 +/- 0.02 nm, respectively. (c) 2005 American Institute of Physics.