Abstract:PIN InGaAs short wavelength infrared (SWIR) focal plane array (FPA) detectors have attracted extensive attention due to their high detectivity, high quantum efficiency, room temperature operation, low dark current, and good radiation resistance. Furthermore, InGaAs FPA detectors have wide applications in many fields, such as aviation safety, biomedicine, camouflage recognition, and infrared night vision. Recently, extensive research has been conducted on the extension of the response spectrum from short wavelength infrared (SWIR) to visible light (VIS) through InP substrate removal and reserving the n-InP contact layer. However, there is little research on the absorption of InGaAs detectors in the ultraviolet (UV) band. In this paper, we present an ultra-broadband UV‒VIS‒SWIR 640 × 512 15 μm InGaAs FPA detector by removing the n-InP contact layer in the active area and reserving the InP contact layer around the pixels for n contact, creating incident light to be directly absorbed by the In0.53Ga0.47As absorption layer. In addition, the optical absorption characteristics of InGaAs infrared detectors with and without an n-InP contact layer are studied theoretically. The test results show that the spectral response is extended to the range of 200–1700 nm. The quantum efficiency is higher than 45% over a broad wavelength range of 300‒1650 nm. The operability is up to 99.98%, and the responsivity non-uniformity is 3.28%. The imaging capability of InGaAs FPAs without the n-InP contact layer has also been demonstrated, which proves the feasibility of simultaneous detection for these three bands.

Studies on InAs/GaAsSb Mid-Wavelength Interband Cascade Infrared Focal Plane Arrays

High Operation Temperature Mid-Wavelength Interband Cascade Infrared Photodetectors Grown On Inas Substrate

320 x 256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays

Fabrication and Characterization of InAs/GaSb Strained Layer Superlattice Infrared Focal Plane Array Detectors

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

320 x 256 long wavelength infrared focal plane arrays based on type- II InAs/GaSb superlattice

Development of a High Performance 1280×1024 InGaAs SWIR FPA Detector at Room Temperature

128×128 Infrared Focal Plane Arrays Based on Type-II InAs/GaSb Superlattice

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates

Ultra-Broadband Ultraviolet–Visible Light–Short Wavelength Infrared InGaAs Focal Plane Arrays via n-InP Contact Layer Removal

The Development of InGaAs Short Wavelength Infrared Focal Plane Arrays with High Performance

High Quantum Efficiency Mid-Wavelength Interband Cascade Infrared Photodetectors with One and Two Stages

Mid-wavelength Interband Cascade Infrared Photodetectors with Two and Three Stages

Research Of Extended-Wavelength 64x64 In0.83ga0.17as Focal Plane Arrays

320×256 Extended Wavelength In x Ga 1-x As/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Room-temperature InAsSb pBin detectors for mid-infrared application

Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate