Abstract:High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 {\mu}m circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.High speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors is focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D*), and the 3dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaSb type-II superlattice with a 50% cutoff wavelength at ~5.3 um at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 um circular diameter device under -5 V applied bias. Limitations on the detector high speed performance are also discussed.

High Quantum Efficiency Mid-Wavelength Interband Cascade Infrared Photodetectors with One and Two Stages

High Operation Temperature Mid-Wavelength Interband Cascade Infrared Photodetectors Grown On Inas Substrate

Mid-wavelength Interband Cascade Infrared Photodetectors with Two and Three Stages

Higher Performance Long Wavelength Interband Cascade Photodetector Compared with a PBπBN Device

High Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaSb Type-II Superlattice

High Responsivity, Dual-Band Response and Intraband Avalanche Multiplication in InGaAs/InP Quantum Well Photodetectors

Studies on InAs/GaAsSb Mid-Wavelength Interband Cascade Infrared Focal Plane Arrays

Structural design of long wavelength interband cascade photodetectors

Mid-wave/long-wave Dual-Color Infrared Quantum Cascade Detector Enhanced by Antenna-Coupled Microcavity.

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Very long wave infrared quantum cascade detector with a twin-well absorption region

Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

Quantum-Tuned Cascade Multijunction Infrared Photodetector

High responsivity quantum cascade detectors with bound-to-miniband diagonal transition

High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction

Multistep InAs/InAsSb Staircase Nbn Long-Wavelength Infrared Detectors with Enhanced Charge Carrier Transport

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation