Ultrasensitive Photodetector Based on 2D WS2/AgInGaS Quantum Dots Heterojunction with Interfacial Charge Transfer.
Xusheng Wang,Danni Yan,Cheng Zhu,Yiping Feng,Tingting Guo,Runmeng Jia,Kairui Qu,Linyun Li,Tong Zhao,Yunhai Xiong,Ahmad Farhan,Yuhai Lin,Linxiang Wu,Yuhui Dong,Shengli Zhang,Xiang Chen,Xiufeng Song,xiufeng song
DOI: https://doi.org/10.1088/2053-1583/acf2ab
IF: 6.861
2023-08-24
2D Materials
Abstract:Tungsten disulfide (WS2), as a typical member of transition metal chalcogenides (TMDs), has attracted extensive research interest in optoelectronics, especially photodetectors. However, the performance of photodetectors based on monolayer WS2 is restricted to weak light absorption. Here, AgInGaS Quantum dots (AIGS-QDs) with a large absorption coefficient and high quantum efficiency are integrated onto WS2 atomic layers to achieve excellent photoelectric performance. Notably, the observed photoluminescence quenching and the reduction of the decay time of photoluminescence in the WS2/AIGS-QDs heterojunction confirm the interfacial charge transfer from AIGS-QDs to WS2 layer. The results show that type II energy band arrangement leading to the efficient separation of photoexcited carriers at the interface between WS2 and AIGS-QDs. This WS2/AIGS-QDs photodetector achieves an ultrahigh responsivity (R) of 3.3 × 103 A/W, an external quantum efficiency (EQE) of 7.8 × 106 % and a detectivity (D*) of 1.3 × 1013 Jones. Our work provides promising potential for future high-performance monolayer TMD-based photodetectors.
materials science, multidisciplinary