Abstract:This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an InSb-like interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 $\mu m$ x 2 $\mu m$ scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 $\mu m$ at 77K has been demonstrated with a dark-current level of $8.3 * 10^{-8} A/cm^2$ at -50 mV and a residual carrier concentration of $9.7 * 10^{14} cm^{-3}$, comparable to the state-of-the-art.

320 x 256 long wavelength infrared focal plane arrays based on type- II InAs/GaSb superlattice

128×128 Infrared Focal Plane Arrays Based on Type-II InAs/GaSb Superlattice

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

320 x 256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays

InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

Fabrication of a 1024 × 1024 Format Long Wavelength Infrared Focal Plane Array Based on Type-Ii Superlattice and Barrier Enhanced Structure

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Fabrication and Characterization of InAs/GaSb Strained Layer Superlattice Infrared Focal Plane Array Detectors

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

Dual-color mid-mid-wavelength infrared InAs / InAsSb superlattice focal plane arrays

Very Long-Wavelength (~20μm) InAs/GaSb Superlattice Infrared Detector with Double InSb-like Interfaces

InAs/GaSb type Ⅱ superlattice infrared detection technology

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

Studies on InAs/GaAsSb Mid-Wavelength Interband Cascade Infrared Focal Plane Arrays

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Optical Properties of Type-Ⅱ InAs/GaSb Superlattices for Wide Band Infrared Detection