Abstract:This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an InSb-like interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 $\mu m$ x 2 $\mu m$ scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 $\mu m$ at 77K has been demonstrated with a dark-current level of $8.3 * 10^{-8} A/cm^2$ at -50 mV and a residual carrier concentration of $9.7 * 10^{14} cm^{-3}$, comparable to the state-of-the-art.

InAs/GaSb type Ⅱ superlattice infrared detection technology

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

InAs/GaSb Type-Ⅱ Superlattices for Infrared Detector

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

320 x 256 long wavelength infrared focal plane arrays based on type- II InAs/GaSb superlattice

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

128×128 Infrared Focal Plane Arrays Based on Type-II InAs/GaSb Superlattice

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

High-Performance Mid-Wavelength InAs/GaSb Superlattice Infrared Detectors Grown by Production-Scale Metalorganic Chemical Vapor Deposition

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Very Long-Wavelength (~20μm) InAs/GaSb Superlattice Infrared Detector with Double InSb-like Interfaces

Fabrication and Characterization of an InAs(Sb)/InxGa1−xAsySb1−y Type‐II Superlattice

Fabrication and Characterization of InAs/GaSb Strained Layer Superlattice Infrared Focal Plane Array Detectors

Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection.

Fabrication and Characterization of InAs/GaSb Type-Ii Superlattice Long-Wavelength Infrared Detectors Aiming High Temperature Sensitivity

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors