Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection.

Fangfang Wang,Jianxin Chen,Zhicheng Xu,Yi Zhou,Li He
DOI: https://doi.org/10.1364/OE.25.001629
IF: 3.8
2017-01-01
Optics Express
Abstract:In this paper, we report on the characterization of InAs/GaAsSb type-II superlattice long wavelength infrared photodiodes grown on InAs substrates by molecular-beam epitaxy and also present the device performance comparison with the superlattice devices grown on GaSb substrates. These devices with PIN structures had a 100% cutoff wavelength of 10 mu m. The dark current density of InAs-based device at -30 mV reverse bias was 4.01 x 10(-4) A/cm(2) and the resistance-area product at zero bias (R(0)A) was 36.9 Omega cm(2). The dark current density of GaSb-based device is higher more than one order of magnitude than that of InAs-based device. The temperature-dependence and bias-dependence of the dark current are studied experimentally and correlated to the theory. Good agreement was achieved between the measured I-V curves and the simulated ones, and between the experimental and theoretically predicted differential resistance values. Compared with InAs-based superlattice device, the generation-recombination current of GaSb-based device is larger and dominates in a wider temperature range due to shorter carrier lifetime and higher defect density. (C) 2017 Optical Society of America
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