320×256 Extended Wavelength In x Ga 1-x As/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise
Yingjie Ma,Xue Li,Xiumei Shao,Shuangyan Deng,Jifeng Cheng,Yi Gu,Yage Liu,Yu Chen,Xianliang Zhu,Tao Li,Yonggang Zhang,Haimei Gong,Jiaxiong Fang
DOI: https://doi.org/10.1109/jstqe.2021.3087182
IF: 4.9
2022-03-01
IEEE Journal of Selected Topics in Quantum Electronics
Abstract:In0.75Ga0.25As and In0.83Ga0.17As 320256 short-wave infrared focal plane arrays (SWIR FPAs) with pixel pitches of 24 and 30 m, extended cutoff wavelengths of 2.2 and 2.5 m, low dark current densities of 5.2 and 21 nAcm2, and high peak detectivities of 61011 and 61012 cmHz12W1 are attained at 180 K, respectively. Lower 1f noises and smaller knee frequencies are observed for the 2.2 m FPA, indicates the dislocation defect-related trap states act as the major contributor for the 1f noise. The non-uniformities of the dark signal and the dark noise are roughly the same for both FPAs at a short integration time of 1 ms (29 and 25 at 180 K, respectively) whereas are much smaller for the 2.2 m FPA at longer integration times. Moreover, the dark current shot noise dominant integration time ranges are determined to be >20 and >2 ms for the 2.2 and 2.5 m FPAs, respectively. Enhanced heat signature recording capability is also observed for wider SWIR spectral range while more effective suppression routes of dislocation defect must be incorporated for further improved sensitivity.
engineering, electrical & electronic,optics,physics, applied,quantum science & technology