640X512 Pixel InGaAs FPAs for Short-Wave Infrared and Visible Light Imaging

Xiumei Shao,Yang Bo,Huang Songlei,Wei Yang,Xue Li,Xianliang Zhu,Li Tao,Chen Yu,Haimei Gong

DOI: https://doi.org/10.1117/12.2273551

2017-01-01

Abstract:The spectral irradiance of moonlight and air glow is mainly in the wavelength region from visible to short-wave infrared (SWIR) band. The imaging over the wavelength range of visible to SWIR is of great significance for applications such as civil safety, night vision, and agricultural sorting. In this paper, 640x512 visible-SWIR InGaAs focal plane arrays (FPAs) were studied for night vision and SWIR imaging. A special epitaxial wafer structure with etch-stop layer was designed and developed. Planar-type 640x512 InGaAs detector arrays were fabricated. The photosensitive arrays were bonded with readout circuit through Indium bumps by flip-chip process. Then, the InP substrate was removed by mechanical thinning and chemical wet etching. The visible irradiance can reach InGaAs absorption layer and then to be detected. As a result, the detection spectrum of the InGaAs FPAs has been extended toward visible spectrum from 0.5 mu m to 1.7 mu m. The quantum efficiency is approximately 15% at 0.5 mu m, 30% at 0.7 mu m, 50% at 0.8 mu m, 90% at 1.55 mu m. The average peak detectivity is higher than 2x1012 cm.Hz(1/2)/W at room temperature with an integrated time of 10 ms. The Visible-SWIR InGaAs FPAs were applied to an imaging system for SWIR and visible light imaging.