Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Effect of Total Dose Irradiation on Si and InGaAs Detectors

Radiation Effects on Scientific CMOS Detectors for X-ray Astronomy: II. Total Ionizing Dose Irradiation

Dose Rate Effects on Array CCDs Exposed by Co-60 Γ Rays Induce Saturation Output Degradation and Annealing Tests

Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Different Dose Rate Radiation Effects on Linear CCDs

Total Dose Radiation Effects on COTS Array CCDs at Low Dose Rate

Primary Total Ionizing Dose Effect Studies on Xilinx SoC Irradiated with 60co Γ Rays

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Performance Analysis of Gamma-Ray-Irradiated Color Complementary Metal Oxide Semiconductor Digital Image Sensors

Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions

Gamma-Ray Irradiation Stability of Zero-Dimensional Cs3Cu2I5 Metal Halide Scintillator Single Crystals

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Effects of Gamma Irradiation on AlGaN Schottky UV Detector

Effect of proton radiation on 8T CMOS image sensors for space applications

Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors

Photoelectric property degradation of graded barrier InAs/GaSb type II superlattice long-wave infrared detectors under 1 MeV electron irradiation

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Effects of X-Ray and γ-Ray Irradiations on 2-D-Planar and 3-D-Stacked CMOS SPADs

Study on radiation damage effects on CdZnTe detectors under 3 MeV and 2.08 GeV Kr ion irradiation

Effects of Electron and Gamma-Ray Irradiation on Cmos Analog Image Sensors

Combined Reactor Neutron Beam and 60co Γ-Ray Radiation Effects on CMOS APS Image Sensors