Abstract:Aluminum nitride (AlN) is an ideal material for the preparation of devices such as deep ultraviolet light-emitting diodes (UV-LEDs) and vacuum detectors because of its wide forbidden bandwidth and excellent physical properties. The quality of AlN films determines the durability and reliability of these devices, and the gas flow rate is an important process parameter that determines the quality of the films. in this paper, metal nitride vapor phase epitaxy (MNVPE) was used to prepare AlN films on sapphire substrates. Firstly, based on the three-dimensional (3D) computational fluid dynamics (CFD) model, the film growth rate and uniformity were investigated at different V/III ratios, and the film quality was best at V/III = 4420. The flow field was analyzed by continuing to adjust the flow rates of Ar and N2 for different gas flow rates at the same V/III ratio, and the results showed that the appearance of vortices had a great influence on the subsequent surface morphology. The crystalline quality, surface morphology, root mean square roughness, and residual stress of the AlN films grown at different gas flow rates were investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and Raman spectroscopy. The results showed that the best surface roughness, crystalline quality, and the lowest residual stress were obtained when the Ar flow rate was 0.25 SLM and the N2 flow rate was 2.5 SLM. The best root-mean-square roughness and crystalline quality obtained under (0002) symmetric reflection conditions were 11 nm and 357 arcsec, respectively.

Influence Comparison of N2and NH3nitrogen Sources on AlN Films Grown by Halide Vapor Phase Epitaxy*

Effect of Flux Rate on AlN Epilayers Grown by Hydride Vapor Phase Epitaxy

High-quality AlN growth: a detailed study on ammonia flow

Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

A Comparison Between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium As the Aluminium Precursors

Effect of flux rate on the growth of AlN films on sapphire by MNVPE

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Preparation Of Aln Film Grown On Sputter-Deposited And Annealed Aln Buffer Layer Via Hvpe

Porous AlN Films Grown on C-face SiC by Hydride Vapor Phase Epitaxy

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Effect of hydrogen atmosphere on the properties of AlN films epitaxially grown on Si substrate by MOCVD

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Influence of Thickness on Strain State and Surface Morphology of Aln Grown by Hvpe

Surface Preparation and Homoepitaxial Deposition of AlN on (0001)-Oriented AlN Substrates by Metalorganic Chemical Vapor Deposition