Abstract:Diamond coating has many excellent properties as the same as those of the natural diamond, such as extreme hardness, high thermal conductivity, low thermal expansion coefficient, high chemical stability, and good abrasive resistance, which is considered as the best tool coating material applied to the high-silicon aluminum alloy cutting. We can use the hot filament chemical vapor deposition method (HFCVD) to deposit a 2–20 μm diamond coating on the cemented carbide tool to improve the cutting performance and increase the tool life significantly. Many experiments have proved that the existence of cobalt phase can weaken the adhesive strength of diamond coating. However, we still lack a perfect theory to explain why the Co element can reduce the adhesive strength of diamond coating is still lacking. What we can do now is only to improve the adhesive strength of diamond coating by doing testing many times in experiments. Compared with these traditional experiments, the first principles simulation based on quantum mechanics can describe the microstructure property and electron density of materials. It is successfully used to investigate the surface, interface, electron component, and so on etc. We can also use this method to study the interface problem at an atomic level. So the first principles based upon density functional theory (DFT) is used to investigate the influence of cobalt binding phase in cemented carbide substrate on adhesive strength of diamond coating. In this article, we uses Material Studios software to build WC/diamond and WC-Co/diamond interface models to evaluate the influence of cobalt phase on the adhesive strength of diamond coating with CASTEP program which can calculate the most stablest structure of film-substrate interface. We use PBE functional form to obtain the exchange potential and relevant potential, and to solve the self-consistent Kohn-Sham equations. We calculate the interfacial bonding energy, analyse the electron density of diamond coating and the bond Mulliken population of diamond film-substrate interface. The results show that the interfacial bonding energy of WC/diamond is 6.74 J/m2 and that of WC-Co/diamond is 5.94 J/m2, which implies that the adhesive strength of WC/diamond is better than that of WC-Co/diamond. We also find that Co element can transfer the charges near the interface of WC/diamond model when the magnetic Co element exists at the WC/diamond interface. As a result, the polarity of tungsten element in tungsten carbide and the polarity of carbon element in diamond coating near the interface turn to be identical polarity, and then the charge density of tungsten in cemented carbide changes from 0.430 e/A3 to 0.201 e/A3 and the charge density of Carbon in diamond changes from-0.045 e/A3 to 0.037 e/A3, and they exclude to each other, so the distance of interface becomes larger than that from the WC/diamond model, which changes from 2.069 Å to 3.649 Å. This can explain why the existence of Co element can weaken the adhesive strength of diamond coating. Meanwhile, Mulliken population analyses show that the bond strength of WC-Co /diamond at the interface is smaller than that of WC/diamond. So this can prove that the cobalt binding phase in cemented carbide substrate can weaken the adhesive strength of diamond coating, and then we need to do some pretreatments in order to reduce the cobalt binding phase in the cemented carbide substrate before depositing diamond coating.

The Influence of Co Binding Phase on Adhesive Strength of Diamond Coating with Cemented Carbide Substrate

Cobalt Concentration on the Interface Mechanism Between Diamond Coating and Cemented Carbide Substrate by First-Principles Calculation and Experimental Study

Research Progress on Cutting Tools Made from WC?Co Cemented Carbide Substrates and Coated with CVD Diamond

First-principles Comparative Study on Diamond/carbide Combinations: Interfacial Adhesion and Bonding Nature

Effect of Cobalt-Etched Treatment on the Adhesion between Diamond Films and WC-Co Cemented Carbide

Adhesion, bonding and tensile properties of Ti doped WC (001)/diamond (111) interface: A first-principles calculation

Diamond/ Β -Sic Film As Adhesion-Enhanced Interlayer for Top Diamond Coatings on Cemented Tungsten Carbide Substrate

Improvement Of Adhesive Strength And Surface Roughness Of Diamond Films On Co-Cemented Tungsten Carbide Tools

Study on interfacial cobalt phase between diamond film and cemented carbide insert

Effect of coatings on binding capability between diamond and matrix

Interface characteristics of CVD diamond coating on WC-Co cemented carbide substrate

Cohesive Failure and Film Adhesion of PVD Coating: Cemented Carbide Substrate Phase Effect and Its Micro-Mechanism

Optimization of Pretreatment Process of Fine Grained Cemented Carbide and Properties of Diamond Coating

Study On The Properties Of Diamond Films On Cemented Carbide Substrates By Surface Implantation Pretreatment Process

One Step Deposition Of Highly Adhesive Diamond Films On Cemented Carbide Substrates Via Diamond/Beta-Sic Composite Interlayers

Effects of Chemical Surface Pretreatments on Diamond Coatings on Cemented Tungsten Carbide Substrate

Cobalt Diffusion During the Initial Stage of CVD Diamond Growth on Cemented Carbide – A Molecular Dynamics and Experimental Study

Adhesion of Diamond Coatings to Cemented Carbide

Enhanced Adhesive Strength of Diamond Coated on Polycrystalline Diamond Substrate by Optimized Substrate Component

Adhesion of Diamond Film to Co- Deficient Cemented Tungsten Carbide Substrate

Mo 2 C interface layer: effect on the interface strength and cutting performance of diamond/Fe-Ni-WC composites