Abstract:Antimony selenide (Sb2Se3) has advantages of low-toxicity, abundant and excellent photoelectric properties. It is widely considered as one of the most promising light-harvesting materials for thin-film solar cells. However, the power conversion efficiency of the Sb2Se3 thin-film solar cell is still far inferior to that of cadmium telluride, copper indium gallium selenium and perovskite solar cells. As is well known, the Sb2Se3 solar cell performance is closely related to the light absorber layer (crystallinity, composition, bulk defect density, etc.), PN heterojunction quality (charge carrier concertation, energy band alignment, interface defect density, etc.) and back-contact barrier formation, which determines the process of carrier generation, excitation, relaxation, transfer and recombination. The low fill factor is one of the core problems that limit further efficiency improvement of Sb2Se3 solar cells, which can be attributed to the high potential barrier at the back contact between the Mo electrode and Sb2Se3 absorption layer. In this work, a heat treatment is applied to the Mo electrode to generate a MoO2 buffer layer. It can be found that this buffer layer can inhibit MoSe2 film growth, exhibiting better Ohmic contact with Sb2Se3, and reducing the back contact barrier of the solar cell. The Sb2Se3 thin film is prepared by an effective combination reaction involving sputtered and selenized Sb precursor. After introducing the MoO2 buffer layer, it can also promote the formation of (hk1) (including (211), (221), (002), etc.) preferentially oriented Sb2Se3 thin films with average grain size over 1 μm. And the ratio of Sb to Se is optimized from 0.57 to 0.62, approaching to the stoichiometric ratio of Sb2Se3 thin film and inhibiting the formation of Vse and SbSe defects. Finally, it enhances the open-circuit voltage (VOC) of solar cells from 0.473 to 0.502 V, the short-circuit current density (JSC) from 22.71 to 24.98 mA/cm2, and the fill factor (FF) from 46.90% to 56.18%, thereby increasing the power conversion efficiency (PCE) from 5.04% to 7.05%. This work proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, thus paving a bright avenue to breaking through the efficiency bottleneck of Sb2Se3 thin film solar cells.

Back Contact Interfacial Modification in Highly-Efficient All-Inorganic Planar N-I-p Sb2Se3 Solar Cells.

Back Contact Interfacial Modification in Highly-Efficient All-Inorganic Planar n-i-p Sb 2 Se 3 Solar Cells

Efficient All-Inorganic Sb<sub>2</sub>S<sub>3</sub> Solar Cells with Matched Energy Levels Using Sb<sub>2</sub>Se<sub>3</sub> as Hole Transport Layers

Back contact interfacial modification mechanism in highly-efficient antimony selenide thin-film solar cells

Back Contact Optimization for Sb<sub>2</sub>Se<sub>3</sub> Solar Cells

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Back Interface and Absorber Bulk Deep‐Level Trap Optimization Enables Highly Efficient Flexible Antimony Triselenide Solar Cell

Chemical Etching Induced Surface Modification and Gentle Gradient Bandgap for Highly Efficient Sb2(S,Se)3 Solar Cell

Interfacial Engineering Towards Enhanced Photovoltaic Performance of Sb2Se3 Solar Cell

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Interfacial Engineering by Indium-Doped CdS for High Efficiency Solution Processed Sb2(S1- Xse X)3 Solar Cells.

Suppressing Buried Interface Nonradiative Recombination Losses Toward High-Efficiency Antimony Triselenide Solar Cells

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An effective engineering with simultaneous carrier density enhancement and interface optimization enables efficient Sb2Se3 solar cells

Efficient CdS/Sb2S3 Interfacial Modification Using Sodium Borohydride Etching for Enhanced Performance of Low-Cost Full-Inorganic Antimony-Based Solar Cells

Interfacial Engineering by Applying Double CdS Structure Electron Transport Layer for High-Performance Sb2(S,Se)3 Solar Cells

Sputtering Al2O3 as an effective interface layer to improve open-circuit voltage and device performance of Sb2Se3 thin-film solar cells