Abstract:High crystalline hexagonal boron nitride epilayers are grown on sapphire by submicron‐spacing vapor deposition, and their luminescence properties are investigated by low temperature cathodoluminescence spectra. Two deep ultraviolet emissions at 5.49 and 5.35 eV are ascribed to the recombination of bound excitons and its phonon replica, while the origination of 4.0 eV defect‐related emission is attributed to the radiative transition from C impurities occupying the B sites to the B vacancies based on the theoretically predicted energy levels. As an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h‐BN) is gaining significant attention for its superior properties and wide applications. Although optical properties of h‐BN have been partially revealed by using h‐BN bulk single crystal, luminescence properties of the h‐BN few‐layer are rare due to its poor crystallinity. In this work, the h‐BN epilayers have been synthesized on sapphire substrates by the submicron‐spacing vapor deposition method. The crystalline quality of the h‐BN epilayer is improved with the increase of the growth temperature, and the full width at half‐maximum of the Raman peak is only ≈13 cm−1. The low temperature cathodoluminescence spectra of h‐BN epilayers exhibit two strong deep ultraviolet (DUV) luminescence peaks at 5.49 and 5.35 eV, as well as a weaker and broader defect‐related emission band at ≈4.0 eV. The DUV emission band is ascribed to the recombination of bound excitons and its phonon replica. Based on the theoretically predicted energy levels, the 4.0 eV emission band is tentatively attributed to the radiative transition from C impurities occupying the B sites to the B vacancies. Moreover, the h‐BN‐based DUV photodetectors exhibit an outstanding performance, making it a promising prospect for optoelectronic applications.

Observation of Strong J-Aggregate Light Emission in Monolayer Molecular Crystal on Hexagonal Boron Nitride

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Structural Determination of a Graphite/Hexagonal Boron Nitride Superlattice Observed in the Experiment.

Solid-State Effects on the Optical Excitation of Push-Pull Molecular J-Aggregates by First-Principles Simulations

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Unambiguous identification of the indirect band nature of atomically thin hexagonal boron nitride

Strong optical response and light emission from a monolayer molecular crystal

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

Luminescence Properties of the Hexagonal Boron Nitride Epilayer

Forming 1D Periodic J-aggregates by Mechanical Bending of BNNTs: Evidence of Activated Molecular Diffusion

Direct Growth of Hexagonal Boron Nitride on Epitaxial Graphene

Investigation on the Microstructure and Optical Properties of C-Axis Oriented Nanocrystalline Hexagonal Bn Films Fabricated by Hot-Filament Chemical Vapor Deposition

Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Excitons and stacking order in h-BN

Through-Space Exciton Delocalization in Segregated HJ-Crystalline Molecular Aggregates

Alignment of fibrous J-aggregates and the resulting macroscopic optical anisotropy observed in static solution