Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

Universal Analytic Model for Ionization Defect Dynamics in Silicon Dioxides

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

Mechanisms and Models for the Suppressed Defect Dynamics in SiO2–Si Structures under High‐To‐Low Switched Dose Rate Irradiations

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

Deep Understanding of Oxide Defects for Stochastic Charging in Nanoscale MOSFETs

Analysis of the electronic structure of β-SiO2 intrinsic defects based on Density Functional Theory

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

First principles study of oxygen vacancy defects in amorphous SiO2

Investigation on random charging/discharging of single oxide trap in SiO2: An ab -initio study

Mechanisms and models of interface trap annealing in positively-biased MOS devices

Electronically Induced Defect Creation at Semiconductor/oxide Interface Revealed by Time-Dependent Density Functional Theory

Charge effect on the irradiation damage of silicon: Insights from phase-field simulation

Multi-Scale Simulations Of Hydrogen Diffusion And Induced Defects In Amorphous-Sio2/Si Interface

Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments

Microscopic mechanism responsible for radiation-enhanced diffusion of impurity atoms

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Electronic properties of ionizing radiation-induced defects at SiO /Si interface associated with non-trivial excess current splitting