Abstract:So far, intrinsic hydrogenated amorphous silicon (a-Si:H(i)) has been commonly used below molybdenum oxide (MoOx) to form a good contact. An a-Si:H(i)/MoOx stack gives good surface passivation, but often results in poor carrier selectivity after exposure to slightly elevated temperatures >130 °C (Geissbühler et al., 2015) [1]. For this reason, we have investigated an alternative interface layer, a very thin Al2O3 tunneling layer (<2 nm), deposited by atomic layer deposition (ALD), that can provide surface passivation, higher transparency and thermal stability without affecting the hole transport across the contact. To demonstrate this new passivating contact a 6" moly-poly cell, with an Al2O3/MoOx stack at the front side and n-type doped polysilicon at the rear side, was made using a high- throughput spatial ALD tool, and E-beam PVD, for the Al2O3 and MoOx layers, respectively. This resulted in an efficiency of 18.2% with a Voc of 651 mV, a FF of 75.6% and a Jsc of 36.9 mA/cm2. A post-deposition anneal (PDA) of the thin Al2O3 interlayer has significant effect on the Al2O3 thickness, layer stoichiometry, contact selectivity, and sputtering-induced damage. Annealing at higher TPDA (350–600 °C) results in ineffective hole carrier transport and makes the stack more sensitive to ITO damage. The best performing device was, therefore, made using an Al2O3 layer without a PDA treatment. Moreover, we have found that this solar cell structure is thermally stable up to at least 210 °C, and even slightly improves under annealing which makes this device industrially appealing.

Bilayer MoOX/CrOX Passivating Contact Targeting Highly Stable Silicon Heterojunction Solar Cells

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

Stable Molybdenum Nitride Contact for Efficient Silicon Solar Cells

Study on the Thermal Stability of Molybdenum Oxide‐Passivated Silicon Solar Cells

Atomic-layer-deposited H:MoOx Function Layer As Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Thermally stable MoOx hole selective contact with Al2O3 interlayer for industrial size silicon solar cells

Improved passivation performance of Al2O3 interlayer/MoOX thin films continuously grown via atomic layer deposition

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

MoOx modified ITO/a-Si:H(p) contact for silicon heterojunction solar cell application

Metal Oxide CrOx As a Promising Bilayer Electron Transport Material for Enhancing the Performance Stability of Planar Perovskite Solar Cells

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Crystalline Silicon Heterojunction Solar Cells with Metal Oxide Window Layers

Sub-stochiometric MoO x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells

Solution‐Processed Copper‐Doped Chromium Oxide with Tunable Oxygen Vacancy for Crystalline Silicon Solar Cells Hole‐Selective Contacts

Enhancing performance of heterojunction silicon solar cells through atomic-layer-deposited MoO x hole contact and atomic-layer-deposited AlZnO layer

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

Improved V 2 O X Passivating Contact for p ‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO X Tunnel Layer

Stable Dopant-Free Electron-Selective Contact for Silicon Solar Cells

Revealing Surface and Interface Evolution of Molybdenum Nitride as Carrier-Selective Contacts for Crystalline Silicon Solar Cells

Heterojunction solar cells with asymmetrically carrier-selective contact structure of molybdenum-oxide/silicon/magnesium-oxide