Abstract:So far, intrinsic hydrogenated amorphous silicon (a-Si:H(i)) has been commonly used below molybdenum oxide (MoOx) to form a good contact. An a-Si:H(i)/MoOx stack gives good surface passivation, but often results in poor carrier selectivity after exposure to slightly elevated temperatures >130 °C (Geissbühler et al., 2015) [1]. For this reason, we have investigated an alternative interface layer, a very thin Al2O3 tunneling layer (<2 nm), deposited by atomic layer deposition (ALD), that can provide surface passivation, higher transparency and thermal stability without affecting the hole transport across the contact. To demonstrate this new passivating contact a 6" moly-poly cell, with an Al2O3/MoOx stack at the front side and n-type doped polysilicon at the rear side, was made using a high- throughput spatial ALD tool, and E-beam PVD, for the Al2O3 and MoOx layers, respectively. This resulted in an efficiency of 18.2% with a Voc of 651 mV, a FF of 75.6% and a Jsc of 36.9 mA/cm2. A post-deposition anneal (PDA) of the thin Al2O3 interlayer has significant effect on the Al2O3 thickness, layer stoichiometry, contact selectivity, and sputtering-induced damage. Annealing at higher TPDA (350–600 °C) results in ineffective hole carrier transport and makes the stack more sensitive to ITO damage. The best performing device was, therefore, made using an Al2O3 layer without a PDA treatment. Moreover, we have found that this solar cell structure is thermally stable up to at least 210 °C, and even slightly improves under annealing which makes this device industrially appealing.

Improved passivation performance of Al2O3 interlayer/MoOX thin films continuously grown via atomic layer deposition

Enhancing performance of heterojunction silicon solar cells through atomic-layer-deposited MoO x hole contact and atomic-layer-deposited AlZnO layer

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Thermally stable MoOx hole selective contact with Al2O3 interlayer for industrial size silicon solar cells

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

MoOx Hole Collection Layer for A-Si: H Based Photovoltaic Cells

UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells

ALD Al2O3 based nanolaminates for solar cell applications

Improved Efficiency and Stability of Organic Solar Cells by Interface Modification Using Atomic Layer Deposition of Ultrathin Aluminum Oxide

Effective Hydrogenation Strategies to Boost Efficiency over 20% for Crystalline Silicon Solar Cell with Al2O3/Cu2O Passivating Contact

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Atomic Layer Deposition of Vanadium Oxide as Hole‐Selective Contact for Crystalline Silicon Solar Cells

Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells

Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In‐Situ Plasma Treatments

Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer