Abstract:Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 $\mu$m-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.

Hybrid Integration of High-Speed MUTC-PD on SOI

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

Back-illuminated Modified Uni-Traveling-carrier Photo-Diodes (Mutc-Pds) with 3-Db Bandwidth over 40 GHz

Integrated Microwave Photonics on Silicon-On-Insulator Platform

Heterogeneously integrated MIR silicon photonics

100 Gbps PAM4 ultra-thin photodetectors integrated on SOI platform by micro transfer printing

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

Integration of a UV curable polymer lens and MUMPs structures on a SOI optical bench

Investigation of Evanescent Coupling Between SOI Waveguides and Heterogeneously-Integrated III–V Pin Photodetectors

Bandwidth Optimization and Fabrication of High-Power MUTC-PD

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Hybrid Integration of End-To-End Optical Interconnects on Printed Circuit Boards

(Invited) Heterogeneous Photonic Integration by Direct Wafer Bonding

Ultrafast MUTC Photodiodes over 200 GHz with High Saturation Power.

Back-To-Back Utc-Pds with High Responsivity, High Saturation Current and Wide Bandwidth

A broadband integrated microwave photonic mixer based on balanced photodetection

Design and Optimization of InAs Waveguide-Integrated Photodetectors on Silicon Via Heteroepitaxial Integration for Mid-Infrared Silicon Photonics

High-Performance Inverted Evanescently-coupledWaveguide Integrated MUTC-PD with High Responsespeed