Abstract:4H silicon carbide(4H-SiC) has gained a great success in high-power electronics, owing to its advantages of wide bandgap, high breakdown electric field strength, high carrier mobility, and high thermal conductivity. Considering the high carrier mobility and high stability of 4H-SiC, 4H-SiC has great potential in the field of photoelectrochemical(PEC) water splitting. In this work, we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays. A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity, that is, a constant low-voltage etching followed by a pulsed high-voltage etching. The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays, respectively. It is found that the nanoporous arrays with medium porosity has the highest PEC current, because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays. The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 k Gy, which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.

Demonstration of 4H-SiC thyristor triggered by 100mW/cm2 UV light

Demonstration of 4H-SiC Thyristor Triggered by 100-mW/cm<SUP>2</SUP> UV Light

Injection Modulation of P(+)-N Emitter Junction in 4H-Sic Light Triggered Thyristor by Double-Deck Thin N-Base

Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch

Demonstration of the First 4 H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

4H-Sic Light Triggered Thyristor with Gradually Doped Thin N-Base

Shortening Turn-on Delay of SiC Light Triggered Thyristor by 7-Shaped Thin N-Base Doping Profile

4H-Sic Double-Layer Thin N-Base Light Triggered Thyristor with a Trenched-Junction Isolated Amplifying Gate

UV Detection Properties of Epitaxial 6H-Sic Diodes with Oxide Ramp Termination

Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-Sic N-P-n Bipolar Phototransistor

Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity

4H-Sic Light Triggered Thyristor with Hole-Injection Enhanced N Short Base for Low Power Dissipation

Numerical Study on Light Triggering Characteristics of NiO/SiC Heterojunction Thyristor

Reach-Through-Collector Based 4H-Sic Phototransistor Enabling Nw/cm2 UV Detection

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

A Light-Activated Sic Darlington Transistor Using Sicge As Base Layer

Reach-Through-Collector Based 4H-SiC Phototransistor enabling nW/cm 2 UV Detection

An Effective High-Voltage Termination for Sic Planar Pn Junctions for Use in High-Voltage Devices and Uv Detectors

Monolithic Integration of 1.2kv Optically-Controlled SiC Npn Transistor and Antiparallel Diode

Demonstration of Irradiation-Resistant 4H-Sic Based Photoelectrochemical Water Splitting

Demonstration of 4H-Sic Visible-Blind EUV and UV Detector with Large Detection Area