Abstract:Photodetectors (PDs) based on two-dimensional (2D) materials are attracting considerable research interest due to the unique properties of 2D materials and their tunable spectral response. However, their performance is not outstanding enough, and the compatibility of their fabrication process with Si-complementary metal oxide semiconductor (CMOS) process flow needs evaluation. Here, we report an unprecedented high-performance, air-stable, self-driven, and broadband room-temperature PD based on the architecture of the PtSe2/ultrathin SiO2/Si heterojunction. The PD exhibits a very prominent responsivity of 8.06 A W−1, a truly high specific detectivity of 4.78 × 1013 cm Hz1/2 W−1, an extremely low dark current of 0.12 pA, and a fantastic photocurrent/dark current ratio of 1.29 × 109 at zero bias. The measured photocurrent responsivities at wavelengths of 375, 532, 1342, and 1550 nm are 2.12, 5.56, 18.12, and 0.65 mA W−1, respectively. Moreover, the fabricated 9 × 9 device array not only illustrates the very high uniformity and reproducibility of the PDs but also shows great potential in the field of ultraviolet-visiblenear infrared illumination imaging applications with a fabrication fully compatible with Si-CMOS technologies. Our design of the PtSe2/ultrathin SiO2/Si heterojunction PD greatly suppresses dark current, improves the diode ideality factor, and increases the potential barrier. Accordingly, it paves the way for a general strategy to enhance the performance of PDs used in novel optoelectronic applications.

Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity

High-Performance 8 × 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Demonstration of the First 4 H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

Highly Sensitive Photoelectric Detection and Imaging Enhanced By Pyro‐phototronic Effect Based On A Photoinduced Dynamic Schottky Effect in 4H‐SiC

Fabrication High-Temperature 4H-Sic Schottky UV Photodiodes by O2 Plasma Pre-Treatment Technology

4H-SiC Ultraviolet Photodetector Array with Vertical MSM Configuration

Performance Analysis of a 4H-Sic N-P-n Phototransistor with Floating Base for Ultraviolet Light Detection

Resonant-Cavity-Enhanced 4H-SiC Thin Film MSM UV Photodetectors on SiO 2 /Si Substrates

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

High-Temperature Performance of the 4H-Sic N-P-n Bipolar UV Phototransistor

Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-Sic N-P-n Bipolar Phototransistor

Towards the Fabrication and Measurement of High Sensitivity Sic-Uv Detectors with Oxide Ramp Termination

Peak Response Wavelength Tunable 4H-Sic UV Detector Covering Near-Ultraviolet Region with High-Temperature Stability and Radiation Hardness

A 4H-Sic N-P-n Phototransistor with On-Line Temperature Monitoring Characteristic

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Reach-Through-Collector Based 4H-SiC Phototransistor enabling nW/cm 2 UV Detection

Reach-Through-Collector Based 4H-Sic Phototransistor Enabling Nw/cm2 UV Detection

Si-CMOS-compatible 2D PtSe2-based Self-Driven Photodetector with Ultrahigh Responsivity and Specific Detectivity