Abstract:The nanowire gate-all-around (GAA) structures with the nearly ultimate channel electrostatic integrity of the gate field can exhibit the best immunity to the short channel effect and drain-induced barrier lowering. Moreover, owing to the enhanced control efficiency of gate over the tunneling junction, the GAA-TFET also gives improved subthreshold swing and on-state current. Despite the excellent device performance, an accurate model is very significant for the practical application. Compared with the numerical methods which are usually time consuming and computationally inefficient, an analytical model could accelerate the device investigation and circuit design process. Even though some tunneling current models have already been reported for nanowire tunneling field-effect-transistors (TFETs), the model of the terminal capacitance is still an issue for nanowire TFETs. The capacitance is of great significance for the transient simulation. In this paper, a physical and analytical potential model considering both the source depletion region and the channel mobile charges, is developed for the GAA-TFETs. The results from the model are verified with the numerical simulations, and the excellent agreement between the two results indicates the validation of the proposed model. Based on the potential model, the terminal charge model and the capacitance model are further developed and also verified by the numerical simulations. The main inflection and variation of the terminal charges and capacitances with the biases can be predicted by our model. Besides, both the model results and the numerical simulations both demonstrate that the gate charge is dominated mainly by the drain charges and the contribution of the source charges can be almost neglected. This also leads to the very small gate-source capacitance and very large Miller capacitance in the TFET device. This will be detrimental to the performance of TFET-based digital circuits but can be mitigated with the hetero-oxide gate structure. The second order effects, such as the quantum confinement and traps, are ignored in this paper and can be taken into the core model in the future work. It should also be noted that there is no iterative process involved during the model derivation, thus the developed model can be easily applied to the widely used SPICE platform and will be useful in designing and investigating the GAA-TFET based circuits.

On the Enhanced Miller Capacitance of Source-Gated Thin Film Transistors

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Source-Gated Transistors For Improved Current-Mode Pixel Drivers

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits

A Dual-Gate IGZO Source-Gated Transistor Based on Field Modulation by TCAD Simulation

Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Effect of LDD structure and channel poly-Si thinning on a gate-all-around TFT (GAT) for SRAM's

New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

Enhancing IGZO Thin Film Transistor Scalability Through Tunneling Contact

The Source/Drain Resistance Of A-Igzo Tft

Effect of source–drain contact and channel length on the performance of vertical thin-film transistors

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

On Gate Capacitance Of Nanotube Networks

Analysis of Gate-Source Voltage Spike Generated by Miller Capacitance and Common Source Inductance

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

A Comb-Gate Silicon Tunneling Field Effect Transistor with Improved On-State Current

Capacitor Reused Gate Driver for Compact In-Cell Touch Displays