Capacitor Reused Gate Driver for Compact In-Cell Touch Displays

Shuai Shen,Congwei Liao,Jiwen Yang,Hailong Jiao,Shengdong Zhang
DOI: https://doi.org/10.1109/jeds.2021.3077141
2021-01-01
IEEE Journal of the Electron Devices Society
Abstract:A thin-film transistor (TFT) integrated gate driver is proposed for compact in-cell touch display, where one capacitor is reused for both turning on low-level maintaining transistors via voltage coupling and maintaining the re-start charge during the touch sensing period. The gate terminal of buffer transistor is thus free of electrical stress during touch sensing period, and can be re-charged for the subsequent re-start period, leading to minimal variations in the transient response. With the capacitor reusing scheme and a capacitor stacking structure, the area of the single stage gate driver is decreased to 645 μm ×210 μm. The fabricated a-Si TFT gate driver with 8 cascaded stages shows that the rising and falling time variations among re-start and normal gate driver stages are less than 1 μs. Versatile touch sensing modes and bidirectional scanning functions are verified.
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