Abstract:A new generation of compact and high-speed electronic devices, based on carbon, would be enabled through the development of robust gate oxides with sub-nanometer effective oxide thickness (EOT) on carbon nanotubes or graphene nanoribbons. However, to date, the lack of dangling bonds on sp2 oriented graphene sheets has limited the high precursor nucleation density enabling atomic layer deposition of sub-1 nm EOT gate oxides. It is shown here that by deploying a low-temperature AlOx (LT AlOx) process, involving atomic layer deposition (ALD) of Al2O3 at 50 °C with a chemical vapor deposition (CVD) component, a high nucleation density layer can be formed, which templates the growth of a high-k dielectric, such as HfO2. Atomic force microscopy (AFM) imaging shows that at 50 °C, the Al2O3 spontaneously forms a pinhole-free, sub-2 nm layer on graphene. Density functional theory (DFT) based simulations indicate that the spreading out of AlOx clusters on the carbon surface enables conformal oxide deposition. Device applications of the LT AlOx deposition scheme were investigated through electrical measurements on metal oxide semiconductor capacitors (MOSCAPs) with Al2O3/HfO2 bilayer gate oxides using both standard Ti/Pt metal gates as well as TiN/Ti/Pd gettering gates. In this study, LT AlOx was used to nucleate HfO2 and it was shown that bilayer gate oxide stacks of 2.85 and 3.15 nm were able to achieve continuous coverage on carbon nanotubes (CNTs). The robustness of the bilayer was tested through deployment in a CNT-based field-effect transistor (FET) configuration with a gate leakage of less than 10-8 A/μm per CNT.

Ultra-thin HfAlO Nanofilms on Graphene Directly Deposited by Atomic Layer Deposition

Controlled Direct Growth of Al2O3-doped HfO2 Films on Graphene by H2O-based Atomic Layer Deposition.

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

HfO2 Dielectric Film Growth Directly on Graphene by H2O-based Atomic Layer Deposition

Atomic-layer-deposited Nanostructures for Graphene-Based Nanoelectronics

Atomic layer deposition of high-quality HFO2 film on graphene using low energy electron beam pretreatment

Direct Growth of High-Quality Al2o3 Dielectric on Graphene Layers by Low-Temperature H2o-Based Ald

Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers

Improvement of Al2o3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2o Treatment

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Property Transformation of Graphene with Al2O3 Films Deposited Directly by Atomic Layer Deposition

Characterization of Al2O3 and HfO2 Grown on Metal Surfaces with Thermal and Plasma Enhanced Atomic Layer Deposition

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene

Atomic layer deposition of HfO2 on graphene from HfCl4 and H20

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

A Facile Way to Deposit Conformal Al2O3 Thin Film on Pristine Graphene by Atomic Layer Deposition

Physical Properties of an Ultrathin Al 2 O 3 /HfO 2 Composite Film by Atomic Layer Deposition and the Application in Thin-Film Transistors

Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene

Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth

Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics