Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Short Circuit Study of 600 V GaN GITs

Overcurrent Capability Evaluation of 600 V GaN GITs under Various Time Durations

Distinct Short Circuit Capability of 650-V <i>p</i>-GaN Gate HEMTs under Single and Repetitive Tests

Short Circuit Capability Characterization and Analysis of P-Gan Gate High-Electron-Mobility Transistors under Single and Repetitive Tests

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

A New Simple and Low Cost Short Circuit Protection Method for P-Gan HEMT

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress

Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching

Study of 1500V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates

650-V E-mode p-GaN Gate HEMT with Schottky Source Extension towards Enhanced Short-Circuit Reliability

Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)

Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors

A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

Simulation Study of Single-Event Burnout in GaN MISFET With Schottky Element

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type <i>p</i>-GaN gate HEMTs

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress