Abstract:In this study, pentabasic CuInxGayAl1-x-ySe2 (CIGAS) powder was prepared by heating in ethylene diamine at 290 degrees C for 20 h, using a solvent thermal reaction technique. The microstructures and electrical properties of the CIGAS targets doped with different aluminum content were investigated by XRD, SEM, XPS and Hall Effect techniques. The results indicate that Al doping had an important effect on the electrical properties and microstructure of the CIGAS targets, especially at the (112) crystal orientation. It was found that the peak of (112) clearly shifted to higher 2 theta values with the increase of aluminum incorporation, while the peak intensity weakened gradually, thus indicating that the crystallinity of the CIGAS targets decreased. The SEM results revealed that the sizes of the CIGAS grains could be adjusted by varying the stoichiometric ratio of In, Ga and Al, and that the Al incorporation could enhance the density of the CIGAS targets. The XRD and XPS analysis showed that some In and Ga atoms in the crystal lattice of chalcopyrite structure could be replaced with Al atoms in the CIGAS materials. Finally, the electrical properties of the targets were analyzed based on the Hall Effect measurements. The results showed that the conductivity, mobility and carrier concentration of the targets changed significantly along with the increase of the Al incorporation content, and that the mobility reducing may have been a result of Al incorporation, which prevents the grain from growing, followed by high-density target forming. (c) 2017 Elsevier B.V. All rights reserved.

Mechanism Investigation of Sb-doping Induced Large-Grain Cu(InGa)Se2 Films Processed from Quaternary Targets

A study on mechanisms of Sb-doping induced grain growth for Cu(InGa)Se2 absorbers deposited from quaternary targets

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Investigation on Sb-doped induced Cu(InGa)Se2 films grain growth by sputtering process with Se-free annealing

Reaction Mechanism of Cu(In, Ga)Se2 Formation During Milling Process of Powder Mixture of Cu2Se, In2Se3 and Ga2Se3

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

Multi-layer Strategy to Enhance the Grain Size of CIGS Thin Film Fabricating by Single Quaternary CIGS Target

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

An Investigation on Preparation of CIGS Targets by Sintering Process

Two-stage method to enhance the grain size of Cu(In,Ga)Se2 absorbers based on sputtering quaternary Cu(In,Ga)Se2 target

Effect of Aluminum Incorporation on the Microstructure and Electrical Properties of Cu(InGaAl)Se2 Targets

Preparation and performances of high density Cu(In, Ga)Se3 ceramic targets

Study of Cu–In–Ga Precursor for Cu(In,Ga)Se_2 Thin Film Prepared by the Two-Stage Process

Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications

Fabrication of Se-rich Cu(In1-XGaX)Se2 Quaternary Ceramic Target

Effects of silver-doping on properties of Cu(In,Ga)Se2 films prepared by CuInGa precursors