Abstract:This study utilized ion implantation to modify the material properties of silicon carbide (SiC) to mitigate subsurface damage during SiC machining. The paper analyzed the mechanism of hydrogen ion implantation on the machining performance of SiC at the atomic scale. A molecular dynamics model of nanoscale cutting of an ion-implanted SiC workpiece using a non-rigid regular tetrakaidecahedral diamond abrasive grain was established. The study investigated the effects of ion implantation on crystal structure phase transformation, dislocation nucleation, and defect structure evolution. Results showed ion implantation modification decreased the extension depth of amorphous structures in the subsurface layer, thereby enhancing the surface and subsurface integrity of the SiC workpiece. Additionally, dislocation extension length and volume within the lattice structure were lower in the ion-implanted workpiece compared to non-implanted ones. Phase transformation, compressive pressure, and cutting stress of the lattice in the shear region per unit volume were lower in the ion-implanted workpiece than the non-implanted one. Taking the diamond abrasive grain as the research subject, the mechanism of grain wear under ion implantation was explored. Grain expansion, compression, and atomic volumetric strain wear rate were higher in the non-implanted workpiece versus implanted ones. Under shear extrusion of the SiC workpiece, dangling bonds of atoms in the diamond grain were unstable, resulting in graphitization of the diamond structure at elevated temperatures. This study established a solid theoretical and practical foundation for realizing non-destructive machining at the atomic scale, encompassing both theoretical principles and practical applications.

Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

MD Simulation of Stress-Assisted Nanometric Cutting Mechanism of 3C Silicon Carbide

Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting

Nano material removal mechanism of 4H-SiC in ion implantation-assisted machining

In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Nano-cutting mechanism of ion implantation-modified SiC: reducing subsurface damage expansion and abrasive wear

Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Investigation of process-induced periodic structure on n -type 4H-SiC with corresponding mechanical characteristics estimation

Deformation and removal characteristics in nanoscratching of 6H-SiC with Berkovich indenter

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Subsurface Damage and Phase Transformation in Laser-Assisted Nanometric Cutting of Single Crystal Silicon

Atomistic investigation of machinability of monocrystalline 3C–SiC in elliptical vibration-assisted diamond cutting

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Modification Mechanism of Collaborative Ions Implanted into 4H-Sic by Atomic Simulation and Experiment

Mechanical properties and indentation-induced phase transformation in 4H–SiC implanted by hydrogen ions

Subsurface Deformation and Crack Propagation Between 3C-Sic/6h-sic Interface by Applying In-Situ Laser-Assisted Diamond Cutting RB-SiC

Influence of crystallographic effect on tool wear, cutting stress, cutting temperature, cutting force and subsurface damage in nano cutting of single crystal silicon carbide