Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

Electronic Structure and Spin Texture of Mo/N Co-Doped Polar 2D-Sic

Electronic properties and quasiparticle model of monolayer MoSi<sub>2</sub>N<sub>4</sub>

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals

Magnetic MoS2 Interface Monolayer on CdS Nanowire by Cation Exchange

Holstein polarons, Rashba-like spin splitting and Ising superconductivity in electron-doped MoSe2

Colossal Magnetization and Giant Coercivity in Ion-Implanted (Nb and Co) MoS 2 Crystals

Spin Texture in Doped Mott Insulators with Spin-Orbit Coupling

Effect of NM (B, C, N, O and F) doping and Fe NM co-doping on structure, electronic and magnetic properties of monolayer 2H MoTe 2 : A first principle investigation

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Collinear magnetic structure and multiferroicity in the polar magnet Co2Mo3O8

Coexistence of valley polarization and Chern insulating states in MoS 2 monolayers with n-p codoping

Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

Spin Hall Effect in the Monolayer Janus Compound MoSSe Enhanced by Rashba Spin-Orbit Coupling

Investigation of Spin Transport Properties in Perpendicularly Magnetized MoS2/Pt/[Co/Ni]n

First-principles investigation of two-dimensional iron molybdenum nitride: A double transition-metal cousin of MoSi2N4(MoN) monolayer with distinctive electronic and topological properties

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Coexistence of valley polarization and Chern insulating states in MoS2 monolayers with n-p codoping

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure