Abstract:Half-metallic Co-based full Heusler alloys have recently captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi level, ultra-low Gilbert damping, and high Curie temperature. In this comprehensive study, employing density functional theory , we delve into the electronic stability and ballistic spin transport properties of a magnetic tunneling junction (MTJ) comprising a Co2MnSb/HfIrSb interface. In-depth investigation of k-dependent spin transmissions uncovers the occurrence of coherent tunneling for the Mn-Mn/Ir interface, particularly when a spacer layer beyond a certain thickness is employed. It has been found that Co-terminated Co2MnSb/HfIrSb interface shows perpendicular magnetic anisotropy, while those with Mn-Sb and Mn-Mn termination exhibit in-plane magnetic anisotropy. Further, our spin-dependent transmission calculations demonstrate that the Mn-Mn/Ir interface manifests strain-sensitive transmission properties under both compressive and tensile strain, and yields a remarkable three-fold increase in majority spin transmission under tensile strain conditions. We find a tunnel magnetoresistance 500% under bi-axial strain of -3%, beyond which the tunnel resistance is found to be theoretically infinite. These compelling outcomes place the Co2MnSb/HfIrSb junction among the highly promising candidates for nanoscale spintronic devices, emphasizing the potential significance of the system in advancement of the field.

Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

Magnetic MoS2 Interface Monolayer on CdS Nanowire by Cation Exchange

Investigation of Spin Transport Properties in Perpendicularly Magnetized MoS2/Pt/[Co/Ni]n

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Magnetic Field Enhanced Single Particle Tunneling in MoS2–superconductor Vertical Josephson Junction*

Strain-dependent Magnon Transport in CoFe2O4/NiO/CoFe2O4 Junctions Induced by Bulk Acoustic Waves

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.

Large Magnetoresistance and Non-Zero Berry Phase in the Nodal-Line Semimetal MoO2

Magnetotransport in a zigzag monolayer MoS2 nanoribbon with ferromagnetic electrodes

Robust Half-Metallic Magnetism in Two-Dimensional Fe/MoS2

Uniformly wetting deposition of Co atoms on MoS(2) monolayer: a promising two-dimensional robust half-metallic ferromagnet

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co2MnSi Electrodes

Interlayer Magnetostatic Coupling and Linear Magnetoresistance in [pd/co]/mgo/co Junction Sensor

Magnetoresistance of Ni/WSe2/Ni junctions: robustness against the thickness of WSe2

Ultrahigh-temperature Ferromagnetism MoS2 Moire Superlattice/graphene Hybrid Heterostructures

Spin Dependent Tunneling and Strain Sensitivity in Co 2 MnSb/HfIrSb Magnetic Tunneling Junction: A First-Principles Study

Colossal Magnetization and Giant Coercivity in Ion-Implanted (Nb and Co) MoS 2 Crystals

Properties of In-Plane Graphene/mos 2 Heterojunctions

Intrinsic Ferromagnetic Semiconductivity Realized in a New MoS2 Monolayer

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact