Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Bilayer MoS2 quantum dots with tunable magnetism and spin

Magnetism in Molybdenum Disulphide Monolayer with Sulfur Substituted by 3d Transition Metals

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Electronic Structures and Magnetic Properties of MoS2 Nanostructures: Atomic Defects, Nanoholes, Nanodots and Antidots.

Modulation of Magnetic and Electrical Properties of Bilayer Graphene Quantum Dots Using Rotational Stacking Faults*

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Strain induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects

Sulfur-vacancy-tunable interlayer magnetic coupling in centimeter-scale MoS2 bilayer

Spin-Valley Locking Effect in Defect States of Monolayer MoS2

Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications

Interlayer‐Incorporation of MoS2 (TM‐MoS2) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Enhanced Magnetic Properties and Tunable Dirac Point of Graphene/mn-Doped Monolayer MoS2 Heterostructures

Effect of sulphur vacancy and interlayer interaction on the electronic structure and spin splitting of bilayer MoS2

Strain-driven Charge Localisation and Spin Dynamics of Paramagnetic Defects in S-deficit 2H-MoS2 Nanocrystals

Direct Observation of Multiple Rotational Stacking Faults Coexisting in Freestanding Bilayer MoS2

Magnetic MoS2 Interface Monolayer on CdS Nanowire by Cation Exchange

Robust Spin-Valley Polarization in Commensurate MoS2 /graphene Heterostructures

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Strain-induced magnetism in MoS2 monolayer with defects

Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers