Magnetoresistance of Ni/WSe2/Ni junctions: robustness against the thickness of WSe2

Kun Yan,Yizhi Hu,Yan Suo,Yuxia Qin,Xiaobin Chen
DOI: https://doi.org/10.1088/1361-6528/ac780e
IF: 3.5
2022-06-14
Nanotechnology
Abstract:Magnetoresistive materials are vital for the development of storage devices. Using the first-principles transport simulations with nonequilibrium Green's function calculation, we investigate the magnetoresistive properties of Ni/WSe 2 /Ni junctions with m-layers of WSe 2 (m=1,2,...,6). For m<=2, the junctions are metallic inspite of the semiconducting nature of few-layer WSe 2 . However, the junctions exhibit transport gaps for m>2. Interestingly, magnetoresistance of the junctions stays around 6% when there are more than one layer of WSe 2 in the center, which is closely related to the robust spacial variation of interfacial properties and can be attributed to no spin flipping in tunneling regions. Our results suggest that Ni/WSe 2 /Ni junctions have a robust magnetoresistance which is insensitive to the thickness of WSe 2 .
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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