Abstract:The structural, magnetic, and electronic properties of transition metal intercalated MoS2 (TM‐MoS2) are systematically studied by the first‐principles calculations. The TM atoms can effectively regulate the magnetic properties of system through the charge transfer. A spin‐filter with a high spin polarization of 83.5% is demonstrated for their applications into spintronics. The multi‐layer 2D materials have attracted increasing interest because the intriguing properties can be achieved by various strategies, such as incorporating ions into the interlayer, turning angles between two layers, and applying strain, which may lead to wide applications in catalysis, ion‐batteries, superconductors, and nanodevices. In this work, there is a proposal to tune the electronic and magnetic properties of MoS2 bilayer for spintronics by incorporating transition‐metal elements into its interlayer (denoted as TM‐MoS2) based on the density‐functional theory (DFT) calculations. It is shown that TM‐MoS2 is thermodynamically stable and can be achieved due to low incorporation energy. It is found that n‐type doping or intrinsic semiconducting can be realized in MoS2 bilayer by controlling the incorporated transition‐metal atoms, accompanied with a rich variety of magnetic orderings. It is further shown that the electronic and magnetic properties of TM‐MoS2 can be substantially tuned by applying compression. Finally, it is demonstrated that the systems can be used as a spin filter, as supported by the spin‐polarized transport calculation. The findings illustrate that the physical properties of layered materials can be controlled by simple interlayer incorporation and shed light on the application of TM‐MoS2 as a fundamental building block for nanoelectronics and spintronics.

Investigation of Spin Transport Properties in Perpendicularly Magnetized MoS2/Pt/[Co/Ni]n

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Electric manipulation of the magnetization in heterostructure Pt/Co/Bi2Se3

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.

Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.

Magnetic Proximity induced efficient charge-to-spin conversion in large area PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructures

Direct Evidence of Spin Transfer Torque on Two-Dimensional Cobalt-Doped MoS2 Ferromagnetic Material

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Spin–orbit torque generated by spin–orbit precession effect in Py/Pt/Co tri-layer structure

Research Update: Spin Transfer Torques in Permalloy on Monolayer MoS2

Interlayer‐Incorporation of MoS2 (TM‐MoS2) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Magnon-mediated spin Hall magnetoresistance and unidirectional magnetoresistance in Pt/NiO/NiFe structures

Spin pumping and inverse spin Hall effect in magnetron-sputtered large area MoS2/Co40Fe40B20 bilayers

Spin-orbit-proximitized ferromagnetic metal by monolayer transition metal dichalcogenide: Atlas of spectral functions, spin textures and spin-orbit torques in Co/MoSe$_2$, Co/WSe$_2$ and Co/TaSe$_2$ heterostructures

Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound

Spin-orbit Torque in Perpendicularly Magnetized[pt/ni]multilayers

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Spin transfer in nanomagnetic devices with perpendicular anisotropy