Normally-Off-$\beta$ -Ga2o3 Power MOSFET with Ferroelectric Charge Storage Gate Stack Structure

Zhaoqing Feng,Xusheng Tian,Zhe Li,Zhuangzhuang Hu,Yanni Zhang,Xuanwu Kang,Jing Ning,Yachao Zhang,Chunfu Zhang,Qian Feng,Hong Zhou,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.1109/led.2020.2970066

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In this work, we have demonstrated normally-off beta-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0mA/mm were achieved in Depletion (D-) and Enhancement (E-) mode device, respectively, which shows negligible current reduction. Steep subthreshold swing (SS) of 72 mV/dec and breakdown voltage of 670 V were also obtained in the E-mode MOSFET. Furthermore, after gate stess test of 10 V for 10(5) s was performed, the threshold voltage (V-TH) shift was 26.5 %. These electrical characteristics of the E-mode beta-Ga2O3 MOSFET shows the great potential for future power switch application.