Abstract:Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We observe a reduced of Schottky barrier < 50 meV by using TiO2/Co contacts, which could be further tuned by gate voltages. Eminently a good transistor performance is achieved in BP devices, with drain current modulation on the order of four to six orders of magnitude. The charge carrier mobility is found to be 155 and 0.18 cm V s for holes and electrons respectively at room temperature. Furthermore, magnetoresistance calculations reveal that the resistances of the BP device with applied gate voltages are in the appropriate range for injection and detection of spin polarized holes. Our results demonstrate the prospect of engineering BP nanolayered devices for efficient nanoelectronic and spintronic applications. 33. Strain enhanced anisotropic thermoelectric performance of Black Phosphorus Guangzhao Qin, Zhenzhen Qin, Sheng-Ying Yue, Hui-Juan Cui, QingRong Zheng, Qing-Bo Yan, Gang Su arXiv:1406.0261 http://arxiv.org/abs/1406.0261 Abstract: The anisotropic geometric, electronic, and thermoelectric (TE) properties of bulk black phosphorus (BP) with strain applied along three lattice directions have been systematically investigated using first-principles calculations combined with semi-classical Boltzmann transport theory. The lattice constant b always increase whatever compressive or tensile strain is applied along z direction, showing an unusual mechanical response with a transition between positive and negative Poisson’s ratio, which may due to the hinge-like structure of BP. The electronic properties are sensitive to strain that there exist transitions of band gap among direct, indirect and zero with strain varying from compressive to tensile. For the TE performance of BP, when there is no strain applied, the ZT value is found to be maximal along x direction as 0.722 at 800K with an electron (n-type) doping concentration of 6.005×10cm, while being smaller for hole (p-type) doping or along other directions, indicating a distinctly anisotropic TE performance. Furthermore, the greatest enhanced ZT values could be obtained for electron (n-type) doped BP as 0.866 at 800K with a tensile strain of 7% applied along y direction. 34. Electronic Structures of Black Phosphorus Studied by Angleresolved Photoemission Spectroscopy

Properties of Monolayer Black Phosphorus Affected by Uniaxial Strain

In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

Strain-controlled Fundamental Gap and Structure of Bulk Black Phosphorus

Remarkable Anisotropic Phonon Response in Uniaxially Strained Few-Layer Black Phosphorus

Anisotropic band evolution of bulk black phosphorus induced by the uniaxial tensile strain

Properties of B- and Si-doped Monolayer Black Phosphorus under Biaxial Strain

Tuning the Band Gap and Effective Mass of Black Arsenic Phosphide Monolayer by In-Plane Strain

Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain

Engineering of the electronic structure of Fe-adsorbed black phosphorus monolayer by strain

Electric Field and Strain Tunable Electronic Structures in Monolayer Black Phosphorus

Temperature-Dependent Mechanical Properties of Monolayer Black Phosphorus by Molecular Dynamics Simulations

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus

Informal Phosphorene Symposium

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus

Studies of Band Structures and Electrical Properties of Uniaxially Strained Phosphorene by a Simplified Two-Band K·p Method

First-principle study on the photoelectric properties of monolayer h-BN under different strain types

Strain‐Induced Ferroelectric Phase Transition in Group‐V Monolayer Black Phosphorus

Significant Band Gap Induced by Uniaxial Strain in Graphene/blue Phosphorene Bilayer

Strain Engineering on Transmission Carriers of Monolayer Phosphorene